HY27UH08AG5M Hynix Semiconductor, HY27UH08AG5M Datasheet - Page 22

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HY27UH08AG5M

Manufacturer Part Number
HY27UH08AG5M
Description
16gb Nand Flash
Manufacturer
Hynix Semiconductor
Datasheet

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Rev. 0.6 / Dec. 2006
Input / Output
Capacitance
Input Capacitance
Program Time
Dummy Busy Time for Cache Program
Dummy Busy Time for Cache Read
Number of partial Program Cycles in the same page
Block Erase Time
Item
Symbol
Table 11: Program / Erase Characteristics
Table 10: Pin Capacitance (TA=25C, F=1.0MHz)
C
C
Parameter
I/O
IN
Condition
V
V
Test
IN
IL
=0V
=0V
Min
-
-
Spare Array
Main Array
HY27UH08AG5M-T(P)
20
20
16Gbit (2Gx8bit) NAND Flash
Symbol
HY27UH08AG(5/D)M Series
t
t
t
t
NOP
NOP
PROG
CBSY
RBSY
BERS
Max
HY27UH08AGDM-UP
Min
-
-
-
-
-
-
Typ
200
15
15
3
5
2
-
-
Max
700
700
4
4
3
-
Cycles
Cycles
Unit
ms
Unit
us
us
us
pF
pF

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