HY27US08281A Hynix Semiconductor, HY27US08281A Datasheet - Page 2

• Manufacturer Part Number: HY27US08281A
• Description: 128mbit 16mx8bit / 8mx16bit Nand Flash Memory
• Manufacturer: Hynix Semiconductor

Revision History
Rev 0.6 / Nov. 2005
Revision
No.
0.3
0.4
0.5
0.6
1) Change AC Characteristics (1.8V device)
2) Change AC Parameter
3) Add Read ID Table
4) Edit Automatic Read at Power On & Power On/Off Timing
- Texts & Figure are Changed.
5) Insert the Marking Information.
6) Change 128Mb Package Type.
- FBGA package is deleted.
- WSOP package is changed to USOP package.
- Figure & dimension are changed.
1) Delete the 1.8V device’s features.
2) Change AC Conditions table
3) Add tWW parameter ( tWW = 100ns, min)
- Texts & Figures are added.
- tWW is added in AC timing characteristics table.
4) Edit Copy Back Program operation step
5) Edit System Interface Using CE don’t care Figures.
6) Correct Address Cycle Map.
1) Correct PKG dimension (TSOP, USOP PKG)
1) Correct USOP figure.
Before
After
Before
After
Before
After
tRC
50
60
0.050
0.100
CP
tRP
25
40
50+tr(R/B#)
60+tr(R/B#)
tCRY(3.3V)
tREH
15
20
History
tWC
50
60
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
50+tr(R/B#)
60+tr(R/B#)
tWP
25
40
tCRY(1.8V)
tWH
15
20
tREA
30
40
tOH
15
10
HY27US(08/16)281A Series
Sep. 02. 2005
Jun. 13. 2005
Nov. 07. 2005
Draft Date
Jul. 26. 2005
- Continued -
Preliminary
Remark
2