HY27US08281A Hynix Semiconductor, HY27US08281A Datasheet - Page 19

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HY27US08281A

Manufacturer Part Number
HY27US08281A
Description
128mbit 16mx8bit / 8mx16bit Nand Flash Memory
Manufacturer
Hynix Semiconductor
Datasheet

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Rev 0.6 / Nov. 2005
Input / Output Capacitance
Input Capacitance
Program Time
Dummy Busy Time for the Lock or Lock-tight Block
Number of partial Program Cycles in the same page
Block Erase Time
Item
Table 11: Program / Erase Characteristics
Table 10: Pin Capacitance (TA=25C, F=1.0MHz)
Parameter
Symbol
C
C
I/O
IN
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
Spare Array
Main Array
Test Condition
V
V
IN
IL
=0V
=0V
Symbol
HY27US(08/16)281A Series
t
t
t
NOP
NOP
PROG
BERS
LBSY
Min
Min
-
-
-
-
-
-
-
Typ
200
5
2
-
-
Max
10
10
Max
500
10
1
2
3
Unit
Cycles
Cycles
pF
pF
Unit
ms
us
us
19

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