MCH3410 Sanyo Semiconductor Corporation, MCH3410 Datasheet - Page 2

• Manufacturer Part Number: MCH3410
• Description: N-channel Silicon Mosfet
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Switching Time Test Circuit
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
400
350
300
250
200
150
100
3.0
2.5
2.0
1.5
1.0
0.5
50
0
0
0
0
Parameter
1
PW=10 s
D.C. 1%
10V
I D =0.5A
0V
P.G
0.2
Drain-to-Source Voltage, V DS -- V
2
Gate-to-Source Voltage, V GS -- V
V IN
3
R DS (on) -- V GS
1.0A
V IN
I D -- V DS
0.4
4
50
G
5
0.6
6
V DD =15V
Symbol
t d (on)
t d (off)
D
V SD
Qgd
Qgs
Qg
t r
t f
S
7
I D =1A
R L =15
0.8
8
MCH3410
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
V DS =10V, V GS =10V, I D =2.0A
V DS =10V, V GS =10V, I D =2.0A
V DS =10V, V GS =10V, I D =2.0A
I S =2.0A, V GS =0
Ta=25 C
V OUT
IT02709
IT02711
9
MCH3410
1.0
10
Conditions
300
250
200
150
100
3.0
2.5
2.0
1.5
1.0
0.5
50
0
0
--60
0
V DS =10V
--40
0.5
--20
Gate-to-Source Voltage, V GS -- V
Ambient Temperature, Ta -- C
1.0
0
min
R DS (on) -- Ta
20
1.5
I D -- V GS
40
Ratings
2.0
typ
0.88
60
3.6
0.6
0.5
17
6
4
5
2.5
80
max
100
3.0
1.2
120
No.6864-2/4
3.5
Unit
nC
nC
nC
140
ns
ns
ns
ns
IT02710
IT02712
V
160
4.0