MCH3410 Sanyo Semiconductor Corporation, MCH3410 Datasheet

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MCH3410

Manufacturer Part Number
MCH3410
Description
N-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCH3410
Manufacturer:
SANYO/三洋
Quantity:
20 000
Ordering number : ENN6864
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : KK
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
Symbol
V DSS
V GSS
I GSS
I DSS
Coss
Ciss
Crss
Tstg
I DP
Tch
P D
yfs
I D
Ultrahigh-Speed Switching Applications
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
I D =1mA, V GS =0
V DS =30V, V GS =0
V GS = 16V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =1A
I D =1A, V GS =10V
I D =0.5A, V GS =4V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
MCH3410
Conditions
Package Dimensions
unit : mm
2167
Conditions
1
0.3
0.65
3
2.0
2
2
0.8mm)
[MCH3410]
min
N-Channel Silicon MOSFET
1.2
1.4
30
13001 TS IM TA-3061
0.15
Ratings
typ
Ratings
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
190
120
115
MCH3410
Continued on next page.
2.0
30
15
--55 to +150
max
150
150
270
2.0
8.0
0.9
2.6
30
20
10
1
No.6864-1/4
Unit
m
m
Unit
pF
pF
pF
W
V
V
A
A
V
V
S
C
C
A
A

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MCH3410 Summary of contents

Page 1

... V DS =10V =1mA yfs V DS =10V = (on =1A =10V R DS (on =0.5A =4V Ciss V DS =10V, f=1MHz Coss V DS =10V, f=1MHz Crss V DS =10V, f=1MHz N-Channel Silicon MOSFET MCH3410 [MCH3410] 0. 0.65 2 Gate 2 : Source 3 : Drain SANYO : MCPH3 Ratings 30 20 2.0 8 ...

Page 2

... See specified Test Circuit t f See specified Test Circuit =10V =10V =2.0A Qgs V DS =10V =10V =2.0A Qgd V DS =10V =10V =2. =2.0A =15V OUT MCH3410 S 0.6 0.8 1.0 IT02709 300 Ta=25 C 250 200 150 100 ...

Page 3

... Drain Current =10V I D =2. 0.5 1.0 1.5 2.0 2.5 3.0 Total Gate Charge 1.2 1.0 0.9 0.8 0.6 0.4 0 100 Ambient Temperature MCH3410 =10V IT02713 1000 V DD =15V =10V 100 7 5 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2001. Specifications and information herein are subject to change without notice. MCH3410 PS No.6864-4/4 ...

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