SI7403BDN Vishay, SI7403BDN Datasheet - Page 5

• Manufacturer Part Number: SI7403BDN
• Description: P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 73333
S-50519—Rev. A, 21-Mar-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.8
0.7
0.6
0.5
0.4
0.3
10
20
1
0.0
−50
−25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
− Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
J
T
− Temperature (_C)
J
25
= 150_C
0.6
50
0.8
I
D
75
= 250 mA
1.0
100
T
J
= 25_C
0.01
1.2
100
125
0.1
10
1
0.1
Safe Operating Area, Junction-to-Ambient
*V
1.4
150
*Limited by r
New Product
GS
Single Pulse
T
A
u minimum V
= 25_C
V
DS
− Drain-to-Source Voltage (V)
DS(on)
1
GS
at which r
0.30
0.25
0.20
0.15
0.10
0.05
0.00
DS(on)
10
30
25
20
15
5
0
0.001
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100 us
1 ms
10 ms
100 ms
1 s
10 s
dc
0.01
1
V
GS
100
T
A
− Gate-to-Source Voltage (V)
0.1
= 25_C
2
Time (sec)
Vishay Siliconix
1
Si7403BDN
3
10
T
A
I
D
= 125_C
= 5.1 A
www.vishay.com
4
100
1000
5
5