SI7403BDN Vishay, SI7403BDN Datasheet

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SI7403BDN

Manufacturer Part Number
SI7403BDN
Description
P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7403BDN-T1-E3
Manufacturer:
LTC
Quantity:
187
Part Number:
SI7403BDN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7403BDNT1E3
Manufacturer:
IR
Quantity:
7 254
Notes:
a.
b.
c.
d.
e.
Document Number: 73333
S-50519—Rev. A, 21-Mar-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Drain Diode Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
V
Surface Mounted on 1” x 1” FR4 Board.
t = 5 sec
Package limited.
See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
DS
−20
−20
(V)
0.074 @ V
0.110 @ V
r
DS(on)
8
J
J
a, b
a, b
3.30 mm
GS
GS
D
Ordering Information: Si7403BDN-T1—E3
= 150_C)
= 150_C)
Parameter
(W)
= −4.5 V
= −2.5 V
7
D
6
a, b
a, b
a, b
a, b
D
PowerPAK 1212-8
P-Channel 20-V (D-S) MOSFET
Bottom View
5
D
c, d
I
D
−7.4
−8
(A)
1
c
S
2
S
A
3
= 25_C UNLESS OTHERWISE NOTED)
Q
S
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
3.30 mm
g
5 6 nC
5.6 nC
New Product
4
= 25_C
= 70_C
= 25_C
= 70_C
= 25_C
= 25_C
= 25_C
= 70_C
= 25_C
= 70_C
(Typ)
G
Symbol
FEATURES
D TrenchFETr Power MOSFET: 2.5-V Rated
D RoHS Compliant
D New PowerPAKr Package
APPLICATIONS
D Load Switching
D PA Switching
T
V
V
J
I
P
P
, T
DM
I
I
I
I
DS
GS
D
D
S
S
− Low Thermal Resistance
− Low 1.07-mm Profile
D
D
stg
−55 to 150
G
−5.1
−4.1
−2.6
Limit
3.1
−7.2
2
−20
−20
260
"8
−8
9.6
6.1
−8
a, b
P-Channel MOSFET
a, b
a, b,
a, b
a, b
c
Vishay Siliconix
S
D
Si7403BDN
www.vishay.com
Completely
Product Is
Pb-free
Unit
_C
_C
W
W
V
V
A
1

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SI7403BDN Summary of contents

Page 1

... V = −2 PowerPAK 1212-8 3. Bottom View Ordering Information: Si7403BDN-T1—E3 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source-Drain Diode Current ...

Page 2

... Si7403BDN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1” x 1” FR4 Board. b. Maximum under steady state conditions is 81 _C/W. SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient ...

Page 3

... Test Condition T = 25_C −2 −4.1 A, di/dt = 100 A/ms di/dt = 100 A/ Si7403BDN Vishay Siliconix Min Typ Max −8 −20 −0.7 −1 25_C = 25_C www.vishay.com Unit ...

Page 4

... Si7403BDN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics thru 0.0 0.5 1.0 1.5 V − Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current and Gate Voltage 0.18 0.16 0.14 0. 0.06 0.04 0. − Drain Current (A) D Gate Charge 5 ...

Page 5

... DS(on 25_C A 0.1 Single Pulse 0.01 0 − Drain-to-Source Voltage ( minimum V at which DS(on) Si7403BDN Vishay Siliconix On-Resistance vs. Gate-to-Source Voltage 125_C 25_C − Gate-to-Source Voltage (V) GS Single Pulse Power, Junction-to-Ambient 30 ...

Page 6

... Si7403BDN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Current De-Rating Package Limited 100 T − Case Temperature (_C) C *The power dissipation P is based 175_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for ...

Page 7

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73333. Document Number: 73333 S-50519—Rev. A, 21-Mar-05 New Product −2 − Square Wave Pulse Duration (sec) −3 −2 10 Square Wave Pulse Duration (sec) Si7403BDN Vishay Siliconix Notes Duty Cycle Per Unit Base = R ...

Page 8

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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