SI7415DN Vishay, SI7415DN Datasheet - Page 3

no-image

SI7415DN

Manufacturer Part Number
SI7415DN
Description
P-channel 60-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7415DN
Manufacturer:
VISHAY
Quantity:
525
Part Number:
SI7415DN
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7415DN-T1
Manufacturer:
TI
Quantity:
17
Part Number:
SI7415DN-T1-E3
Manufacturer:
TexasInstruments
Quantity:
506
Part Number:
SI7415DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7415DN-T1-E3
0
Part Number:
SI7415DN-T1-GE3
Manufacturer:
C&K
Quantity:
1 001
Part Number:
SI7415DN-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
50 525
Part Number:
SI7415DN-T1-GE3
Manufacturer:
VISHAY
Quantity:
150
Part Number:
SI7415DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7415DN-T1-GE3
0
Company:
Part Number:
SI7415DN-T1-GE3
Quantity:
70 000
Document Number: 71691
S-51129—Rev. D, 13-Jun-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.20
0.16
0.12
0.08
0.04
0.00
10
20
10
8
6
4
2
0
1
0.0
0
0
V
V
I
Source-Drain Diode Forward Voltage
D
GS
DS
= 5.7 A
0.2
On-Resistance vs. Drain Current
= 4.5 V
= 30 V
4
V
SD
4
Q
g
I
− Source-to-Drain Voltage (V)
D
− Total Gate Charge (nC)
0.4
− Drain Current (A)
Gate Charge
T
8
J
= 150_C
0.6
8
12
0.8
V
12
GS
T
16
J
= 10 V
= 25_C
1.0
20
16
1.2
1200
1000
0.20
0.16
0.12
0.08
0.04
0.00
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
−25
V
I
C
D
GS
rss
10
= 5.7 A
V
V
2
= 10 V
GS
DS
T
J
0
− Gate-to-Source Voltage (V)
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
20
25
Capacitance
4
C
Vishay Siliconix
I
D
oss
30
50
= 5.7 A
C
iss
6
75
Si7415DN
40
100
www.vishay.com
8
50
125
150
10
60
3

Related parts for SI7415DN