SI7415DN Vishay, SI7415DN Datasheet

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SI7415DN

Manufacturer Part Number
SI7415DN
Description
P-channel 60-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes
a.
b.
c.
Document Number: 71691
S-51129—Rev. D, 13-Jun-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
i
DS
−60
−60
(V)
J
Ordering Information: Si7415DN-T1
ti
t A bi
8
3.30 mm
D
7
0.110 @ V
0.065 @ V
J
J
a
a
D
= 150_C)
= 150_C)
t
a
a
6
r
Parameter
Parameter
DS(on)
D
Si7415DN-T1—E3 (Lead (Pb)-Free)
PowerPAK 1212-8
Bottom View
5
GS
GS
a
a
D
= −4.5 V
= −10 V
(W)
P-Channel 60-V (D-S) MOSFET
a
1
S
b,c
2
S
3
S
3.30 mm
A
4
= 25_C UNLESS OTHERWISE NOTED)
G
Steady State
Steady State
t v 10 sec
T
T
T
T
I
A
A
A
A
D
−5.7
−4.4
= 25_C
= 70_C
= 25_C
= 70_C
(A)
Symbol
Symbol
T
R
R
R
FEATURES
D TrenchFETr Power MOSFET
D New PowerPAKr Package
D Fast Switching
APPLICATIONS
D Load Switches
D Half-Bridge Motor Drives
D High voltage Non-Synchronous Buck Converters
J
V
V
I
P
P
, T
thJC
DM
thJA
I
I
I
GS
DS
D
D
S
D
D
stg
− Low Thermal Resistance, R
− Low 1.07-mm Profile
G
P-Channel MOSFET
10 secs
Typical
−5.7
−4.6
−3.2
3.8
2.0
1.9
26
65
S
D
−55 to 150
"20
−60
−30
260
Steady State
Maximum
Vishay Siliconix
−3.6
−2.9
−1.3
1.5
0.8
2.4
33
81
thJC
Si7415DN
www.vishay.com
Unit
Unit
_C/W
_C
_C
C/W
W
W
V
V
A
A
RoHS
COMPLIANT
Available
1

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SI7415DN Summary of contents

Page 1

... V = −4 PowerPAK 1212-8 3. Bottom View Ordering Information: Si7415DN-T1 Si7415DN-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current continuous Source Current (Diode Conduction) ...

Page 2

... Si7415DN Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... V − Source-to-Drain Voltage (V) SD Document Number: 71691 S-51129—Rev. D, 13-Jun- 25_C J 0.8 1.0 1.2 Si7415DN Vishay Siliconix Capacitance 1200 1000 C iss 800 600 400 C oss 200 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si7415DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0 250 mA D 0.6 0.4 0.2 0.0 −0.2 −0.4 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Normalized Thermal Transient Impedance, Junction-to-Case ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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