LM5060Q1 National Semiconductor Corporation, LM5060Q1 Datasheet
LM5060Q1
Available stocks
Related parts for LM5060Q1
LM5060Q1 Summary of contents
Page 1
... MOSFET is latched off until either the Enable input or the Un- der-Voltage Lock-Out input is toggled low and then high. Typical Application © 2009 National Semiconductor Corporation LM5060Q1 Features ■ Automotive grade / AEC Q-100 ■ ...
Page 2
... Ordering Information Order Number LM5060Q1MM LM5060Q1MMX Automotive Grade (Q) product incorporates enhanced manufacturing and support processes for the automotive market, including defect detection methodologies. Reliability qualification is compliant with the requirements and temperature grades defined in the AEC Q100 standard. Automotive Grade products are identified with the letter Q ...
Page 3
Pin Name Description No. 9 OUT Output VoltageSense 10 GATE Gate drive output Applications Information Connect to the output rail (external MOSFET source). Internally used to detect V V conditions. GS Connect to the external MOSFET’s gate. A charge-pump driven ...
Page 4
Absolute Maximum Ratings If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications GND (Note 4, Note 5) IN SENSE, OUT to GND (Note 6) GATE to GND (Note 4, ...
Page 5
Symbol Parameter Gate output voltage in normal V GATE operation V Status Comparator Threshold GS V GATE-TH voltage Zener Clamp between GATE Pin and V GATE-CLAMP OUT Pin Timer (TIMER Pin) V Timer Fault Threshold TMRH V Timer Re-enable Threshold ...
Page 6
Typical Performance Characteristics VIN Pin Current vs. VIN Pin Voltage OUT Pin Current (I vs. VIN Voltage SENSE Current (I vs VIN Voltage www.national.com 30104203 ) OUT-EN 30104205 ) SENSE 30104207 VIN Voltage GATE vs. Input Voltage ...
Page 7
GATE Pull-Down Current Off (I GATE-OFF vs. GATE Voltage 30104209 UVLO Threshold Voltage (UVLO ) TH vs. Temperature 30104259 UVLO, EN Current vs. Temperature 30104212 ) EN Threshold Voltage (EN vs. Temperature GATE Pull-Down Current Fault (I vs. GATE Voltage ...
Page 8
V Comparator Threshold Voltage (V GS vs. Temperature GATE Current (I vs. Temperature Gate Pull-Down Current - Fault (I vs. Temperature www.national.com ) V GATE-TH DS 30104214 ) GATE 30104216 ) GATE-FLT 30104218 8 Comparator Offset Voltage (V ) OFFSET ...
Page 9
Low Voltage (PGD ) VOL vs. Temperature 30104220 9 www.national.com ...
Page 10
Block Diagram www.national.com 10 30104221 ...
Page 11
Functional Description The LM5060 is designed to drive an external high-side N- channel MOSFET. Over-Current protection is implemented by sensing the voltage drop across the MOSFET. When an adjustable voltage drop threshold is exceeded, and an ad- justable time period ...
Page 12
FIGURE 2. Voltages During Normal Start Up Sequence TABLE 1. Overview of Operating Conditions Input Conditions OVP VIN EN UVLO SENSE-OUT (typ) (typ >5.10V >5.10V NA SENSE>OUT H L <2V >5.10V SENSE<OUT SENSE>OUT ...
Page 13
EN pin, the UVLO pin, or the VIN pin is toggled low and then high. The block diagram of the LM5060 shows the details of the TIMER pin. There are three ...
Page 14
V FAULT CONDITION DS The LM5060 includes a V Fault Comparator that senses the DS voltage difference between the SENSE pin and the OUT pin. If the voltage at the OUT pin falls lower than the voltage at the SENSE ...
Page 15
UNDER-VOLTAGE LOCK-OUT (UVLO) The Under-Voltage Lock-Out function will turn off the external N-Channel MOSFET with a 2.2 mA (typical) current sink at the GATE pin. Figure 6 shows the threshold levels of the UV- LO input. A resistor divider as ...
Page 16
Application Information V FAULT DETECTION and SELECTING SENSE PIN DS RESISTOR R S The LM5060 monitors the V voltage of the external N- DS Channel MOSFET. The drain to source voltage threshold (V ), which is set with the resistor ...
Page 17
V Where I TMRH TMRH V is typically 300 mV. If the C TMRL TIMER (0.068 μF) the V transition fault delay time would typically DS be: Fault Delay = (((2V-0.3V) x 0.068 μ ...
Page 18
Calculate R2 with the following formula the minimum and V is the maximum input volt- INMIN INMAX age of the design specification. All other variables can be found in the Electrical Characteristics table of this document. To ...
Page 19
OVP, UVLO, and nPGD pins from harm, a larger bulk capac- itor from VIN to GND may be needed to reduce the amplitude of the voltage spikes. Protection diodes or surge suppressors may also be used to limit the exposure ...
Page 20
FIGURE 14. Application with Reverse Polarity Protection with Diodes for OUT Pin Protection REVERSE POLARITY PROTECTION WITH A RESISTOR An alternative to using external diodes to protect the LM5060 OUT pin in the reverse polarity input condition is a resistor ...
Page 21
FIGURE 16. Current Limiting Resistor in the OUT Path for OUT > SENSE Condition Case B for situations where V > V and there is no reverse OUT IN polarity situation present. See Figure 16 also positive, ...
Page 22
I is the OUT pin bias current. When R OUT-EN been selected, the following formula can be used for V min and max calculations: The MOSFET drain-to-source current threshold is: Where R is the on resistance of the pass element ...
Page 23
Physical Dimensions inches (millimeters) unless otherwise noted 10-Lead MSOP Package NS Package Number MUB10A 23 www.national.com ...
Page 24
... National Semiconductor and the National Semiconductor logo are registered trademarks of National Semiconductor Corporation. All other brand or product names may be trademarks or registered trademarks of their respective holders. ...