ARF1500 Microsemi Corporation, ARF1500 Datasheet - Page 2

• Manufacturer Part Number: ARF1500
• Description: Rf Power Mosfet N-channel Enhancement Mode
• Manufacturer: Microsemi Corporation

DYNAMIC CHARACTERISTICS
FUNCTIONAL CHARACTERISTICS
1
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
Symbol
Symbol
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%.
t
t
C
C
G
C
d(on)
d(off)
Ψ
oss
t
t
η
rss
iss
PS
r
f
60
50
40
30
20
10
0
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic
Common Source Amplifi er Power Gain
Drain Effi ciency
Electrical Ruggedness VSWR 10:1
0
V
Figure 2, Typical Transfer Characteristics
T
GS
J
V
= +125°C
, GATE-TO-SOURCE VOLTAGE (VOLTS)
DS
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
2
> I
T
D
(ON) x R
J
= +25°C
4
DS
(ON)
6
MAX.
T
J
= -55°C
8
Figure 1, Typical Capacitance vs. Drain-to-Source Voltage
20,000
10,000
5000
1000
10
Per transistor section unless otherwise specifi ed.
500
100
.1
V
DS
12
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
14
1
V
GS
10
Test Conditions
I
Test Conditions
= 0V
D
f = 27.12 MHz
P
V
= 60A @ 25°C
V
V
R
f = 1 MHz
V
out
DS
GS
DD
G
GS
= 1.6Ω
= 750W
= 150V
= 15V
= 250
= 0V
V
C
240
100
C
C
100 200
50
10
oss
DD
rss
Figure 3, Typical Maximum Safe Operating Area
iss
5
1
1
V
DS
= 125V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DATA FOR BOTH SIDES
LIMITED BY R
OPERATION HERE
IN PARALLEL
T
T
SINGLE PULSE
C
J
5
=+200°C
=+25°C
DS
(ON)
No Degradation in Output Power
10
MIN
MIN
17
70
50 100
5150
TYP
TYP
500
215
7.5
6.0
20
10
19
75
6030
MAX
MAX
650
225
500
ARF1500
100us
1ms
10ms
100ms
UNIT
UNIT
dB
pF
ns
%