ARF1500 Microsemi Corporation, ARF1500 Datasheet

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ARF1500

Manufacturer Part Number
ARF1500
Description
Rf Power Mosfet N-channel Enhancement Mode
Manufacturer
Microsemi Corporation
Datasheet

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RF POWER MOSFET
N - CHANNEL ENHANCEMENT MODE
The ARF1500 is an RF power transistor designed for very high power scientifi c, commercial, medical and industrial
RF power generator and amplifi er applications up to 40 MHz.
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
THERMAL CHARACTERISTICS
Symbol
Symbol
Symbol
T
V
BV
V
V
R
V
J
R
I
I
V
DS
GS
,T
isolation
DSS
GSS
P
g
θJHS
Specifi ed 125 Volt, 27.12 MHz Characteristics:
DSS
T
I
θJC
GS
D
DSS
fs
D
L
STG
(ON)
(TH)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed
Output Power = 750 Watts.
Gain = 17dB (Class C)
Effi ciency > 75%
Characteristic (per package unless otherwise noted)
Junction to Case
Junction to Sink
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Gate-Source Voltage
Total Device Dissipation @ T
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Voltage
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Forward Transconductance (V
RMS Voltage
Gate Threshold Voltage (V
(60Hz Sinewave from terminals to mounting surface for 1 minute)
(Use High Effi ciency Thermal Joint Compound and Planar Heat Sink Surface.)
1
(I
DS
D
C
Microsemi Website - http://www.microsemi.com
(ON)
= V
C
= 25°C
DS
= 25°C
= 30A, V
GS
GS
= 25V, I
DS
DS
, I
GS
= ±30V, V
D
= 500V, V
= 400V, V
= 0V, I
= 50mA)
GS
D
= 30A)
= 10V)
D
DS
= 250μA)
GS
GS
= 0V)
= 0V)
= 0V, T
High Performance Power RF Package.
Very High Breakdown for Improved Ruggedness.
Low Thermal Resistance.
Nitride Passivated Die for Improved Reliability.
All Ratings: T
S
S
C
S
S
BeO
= 125°C)
ARF1500
G
D
D
G
1525-xx
S
S
S
S
C
= 25°C unless otherwise specifi ed.
125V
TBD
MIN
500
MIN
6
3
-55 to 175
ARF1500
1500
0.16
750W
500
±30
300
TYP
TYP
ARF1500
7.5
60
6
1000
±400
MAX
MAX
0.10
100
7.5
.
5
40MHz
Amps
Watts
UNIT
mhos
Volts
Volts
UNIT
UNIT
°C/W
Volts
Volts
Volts
°C
μA
nA

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ARF1500 Summary of contents

Page 1

... RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE The ARF1500 power transistor designed for very high power scientifi c, commercial, medical and industrial RF power generator and amplifi er applications MHz. • Specifi ed 125 Volt, 27.12 MHz Characteristics: • Output Power = 750 Watts. ...

Page 2

... TYP MAX 125V Degradation in Output Power DATA FOR BOTH SIDES IN PARALLEL OPERATION HERE LIMITED BY R (ON =+25° =+200°C J SINGLE PULSE 100 500 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS ARF1500 UNIT pF ns UNIT dB % 100us 1ms 10ms 100ms ...

Page 3

... Figure 6, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration Table 1 - Typical Class AB Large Signal Impedance -- ARF1500 F (MHz (Ω) 2.0 6.7-j 12 13.5 0.45 -j 2.5 27 0.22 -j 0. .19 Thermal Considerations and Package Mounting: The rated 1500W power dissipation is only avail- able when the package mounting surface is at 25° ...

Page 4

... C10 L4 Output C11 ARF1500 27.12 MHz Test Circuit Parts placement 1:1 pcb artwork C1,C11 ARCO 465 50-450pF mica trimmer C2 1500pF ATC 700B C3 2x 3300 pF ATC 700B C4 8200pF 500V NPO ceramic C5 150pF 500V NPO C7-C8 .1uF 250V ceramic chip C9- C10 1000pF Z5U 500V L1 120 nH 5t #20 .25" ...

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