GSMBT4403 E-Tech Electronics LTD, GSMBT4403 Datasheet
GSMBT4403
Manufacturer Part Number
GSMBT4403
Description
Pnp Epitaxial Planar Transistor
Manufacturer
E-Tech Electronics LTD
Datasheet
1.GSMBT4403.pdf
(2 pages)
G SM BT 4 4 0 3
Description
The GSMBT4403 is designed for general purpose switching and amplifier applications.
Features
Package Dimensions
Absolute Maximum Ratings at Ta = 25 : : : :
Junction Temperature
Storage Temperature
Collector to Base Voltage at Ta=25 :
Collector to Emitter Voltage at Ta=25 :
Emitter to Base Voltage at Ta=25 :
Collector Current at Ta=25 :
Total Power Dissipation at Ta=25 :
Characteristics at Ta = 25 : : : :
BV
BV
BV
I
*V
*V
*V
*V
*h
*h
*h
*h
*h
fT
Cob
CE
& High DC Current Gain: 100-300 at 150mA
&
FE
FE
FE
FE
FE
CE
CE
BE
BE
Complementary to GSMBT4401
CBO
CEO
EBO
X
1
2
3
4
5
(sat)1
(sat)2
(sat)1
(sat)2
Symbol
Parameter
Min.
100
100
200
-40
-40
30
60
20
-5
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
P
P
N
N
Symbol
P
VCBO
VCEO
VEBO
P
Tstg
PD
IC
Tj
Max.
-100
-400
-750
-950
-1.3
300
8.5
E
E
-
-
-
-
-
-
-
-
P
P
CORPORATION
I
I
T
T
A
A
X
X
I
Unit
MHz
I
mV
mV
mV
nA
pF
A
V
V
V
V
A
L
L
P
P
L
I
I
I
V
I
I
I
I
V
V
V
V
V
V
V
L
C
C
E
C
C
C
C
-55 ~ +150
CE
CE
CE
CE
CE
CE
CE
CE
=-10uA
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
=-100uA
=-1mA
=-150mA, I
=-500mA, I
=-150mA, I
=-500mA, I
A
A
Ratings
REF.
HE
A1
A2
+150
=-35V, V
=-1V, I
=-1V, I
=-1V, I
=-2V, I
=-2V, I
=-10V, I
=-10V, f=1MHz
A
D
E
-600
225
N
N
-40
-40
-5
A
A
R
R
C
C
C
C
C
Min.
0.80
0.80
1.80
1.15
1.80
C
=-0.1mA
=-1mA
=-10mA
=-150mA
=-500mA
BE
0
B
B
B
B
=-20mA, f=100MHz
Millimeter
T
T
=-15mA
=-50mA
=-15mA
=-50mA
=-0.4V
R
R
A
A
Max.
Test Conditions
1.10
0.10
1.00
2.20
1.35
2.40
N
N
S
S
I
I
S
S
REF.
ISSUED DATE :2004/12/20
REVISED DATE :
T
Q1
T
L1
L
b
c
e
O
O
R
R
Unit
mW
Min.
0.15
0.25
0.10
mA
V
V
V
0.15 BSC.
0.42 REF.
0.65 REF.
Millimeter
Max.
0.35
0.40
0.25
1/2
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GSMBT4403 Summary of contents
Page 1
... Description The GSMBT4403 is designed for general purpose switching and amplifier applications. Features & Complementary to GSMBT4401 & High DC Current Gain: 100-300 at 150mA Package Dimensions Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature Collector to Base Voltage at Ta=25 : Collector to Emitter Voltage at Ta=25 : ...
Page 2
Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not ...