GSMBT3906 E-Tech Electronics LTD, GSMBT3906 Datasheet

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GSMBT3906

Manufacturer Part Number
GSMBT3906
Description
Pnp Epitaxial Planar Transistor
Manufacturer
E-Tech Electronics LTD
Datasheet
G
Description
The GSMBT3906 is designed for general purpose switching and amplifier applications.
Package Dimensions
Absolute Maximum Ratings at Ta = 25 : : : :
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Characteristics at Ta = 25 : : : :
BVCBO
BVCEO
BVEBO
ICES
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
h
h
h
h
h
fT
Cob
Cib
td
tr
tstg
tf
G
FE
FE
FE
FE
FE
1
2
3
4
5
S
S
Symbol
M
M
Parameter
B
B
T
T
3
3
-0.65
Min.
100
250
-40
-40
60
80
60
30
-5
9
9
-
-
-
-
-
-
-
-
-
-
-
0
0
6
6
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
P
P
Symbol
N
N
VCBO
VCEO
VEBO
Tstg
PD
IC
P
Tj
P
E
E
Max.
-0.25
-0.85
-0.95
-0.4
300
225
-50
-50
4.5
10
35
35
75
-
-
-
-
-
-
-
-
P
P
I
I
T
T
A
A
X
X
I
I
A
A
Unit
MHz
nA
nA
pF
pF
ns
ns
ns
ns
V
V
V
V
V
V
V
L
L
P
P
L
L
IC=-10uA
IC=-10mA
IE=-10uA
VCB=-30V
VEB=-3V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
VCE=-20V, IE=-10mA, f=100MHz
VCB=-10V, f=100KHz
VEB=-0.5V, f=100KHz
VCC=-3V, VBE(OFF)=-0.5V, IC=-10mA, IB1=-1mA
VCC=-3V, VBE(OFF)=-0.5V, IC=-10mA, IB1=-1mA
VCC=-3V, IC=-10mA, IB1=-IB2=-1mA
VCC=-3V, IC=-10mA, IB1=-IB2=-1mA
A
A
-55 ~ +150
Ratings
REF.
N
N
HE
A1
A2
+150
A
D
E
-200
300
-40
-40
-5
A
A
R
R
Min.
0.80
0.80
1.80
1.15
1.80
T
T
0
Millimeter
R
R
A
A
N
N
Max.
Test Conditions
1.10
0.10
1.00
2.20
1.35
2.40
S
S
I
I
S
S
T
T
REF.
ISSUED DATE :2005/06/08
REVISED DATE :
Q1
L1
O
O
L
b
c
e
R
R
Unit
mW
Min.
0.15
0.25
0.10
mA
V
V
V
0.15 BSC.
0.42 REF.
0.65 REF.
Millimeter
Max.
0.35
0.40
0.25
1/2

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GSMBT3906 Summary of contents

Page 1

... Description The GSMBT3906 is designed for general purpose switching and amplifier applications. Package Dimensions Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation ...

Page 2

Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not ...

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