PUMF12 NXP Semiconductors, PUMF12 Datasheet - Page 4

• Manufacturer Part Number: PUMF12
• Description: Pnp General Purpose Transistor; Npn Resistor-equipped Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Device mounted on an FR4 printed-circuit board.
APPLICATION INFORMATION
2002 Nov 07
handbook, halfpage
TR1 (PNP)
I
I
V
h
C
f
TR2 (NPN)
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------ -
R1
amb
CBO
EBO
T
CBO
CEO
EBO
FE
FE
CEsat
CEsat
i(off)
i(on)
c
c
PNP general purpose transistor;
NPN resistor-equipped transistor
= 25 C unless otherwise specified.
Fig.2 Typical power management circuit.
collector cut-off current
emitter cut-off current
saturation voltage
DC current gain
collector capacitance
transition frequency
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
saturation voltage
input off voltage
input on voltage
input resistor
resistor ratio
collector capacitance
5
R1
PARAMETER
R BE(ext)
1
R2
2
3
4
R B(ext)
MHC322
6
V
V
V
I
V
V
V
V
V
V
V
V
I
V
V
V
C
C
CB
CB
EB
CE
CB
CE
CB
CE
CE
EB
CE
CE
CE
CB
= 50 mA; I
= 10 mA; I
= 30 V; I
= 30 V; I
= 4 V; I
= 6 V; I
= 12 V; I
= 12 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 0.3 V; I
= 10 V; I
4
C
C
C
CONDITIONS
C
C
E
B
B
B
E
= 0
= 5 mA
= 100 A
C
E
E
B
E
C
= 0
= 0
= 0
= 0; T
= 0.5 mA
= i
= 1 mA
= 2 mA
= 5 mA; note 1
= 0
= 0; T
= i
= 2 mA; f = 100 MHz 100
e
e
= 0; f = 1 MHz
= 0; f = 1 MHz
j
= 150 C
j
= 150 C
120
80
2
15.4
1.7
MIN.
0.9
1.1
22
2.1
TYP.
Product specification
PUMF12
2.2
100
1
50
120
150
0.5
28.6
2.6
2.5
MAX. UNIT
100
10
100
200
nA
nA
mV
pF
MHz
nA
mV
V
V
k
pF
A
A
A
A