BCV62 NXP Semiconductors, BCV62 Datasheet - Page 3

• Manufacturer Part Number: BCV62
• Description: Pnp General Purpose Double Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
1999 Apr 08
R
Transistor TR1
I
I
h
V
V
V
C
f
F
Transistor TR2
V
h
j
CBO
EBO
T
SYMBOL
SYMBOL
FE
FE
CEsat
BEsat
BE
EBS
th j-a
= 25 C unless otherwise specified.
c
PNP general purpose double transistor
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
base-emitter forward voltage
DC current gain
BCV62A
BCV62B
BCV62C
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
I
I
I
f = 1 kHz; B = 200 Hz
I
I
I
E
E
C
C
C
C
C
C
C
C
C
E
C
C
E
E
C
= 0; V
= 0; V
= i
= 250 mA; V
= 10 A; V
= 0; V
= 100 A; V
= 2 mA; V
= 10 mA; I
= 100 mA; I
= 10 mA; I
= 100 mA; I
= 2 mA; V
= 10 mA; V
= 10 mA; V
= 200 A; V
= 2 mA; V
e
= 0; V
CB
CB
EB
= 30 V
= 30 V; T
= 5 V
3
CB
CB
CE
CE
CE
CONDITIONS
B
B
CB
CE
CE
B
B
= 10 V
CE
CE
= 0.5 mA
= 0.5 mA; note 1
= 0
= 5 V
= 5 V; note 1
= 5 V
= 5 mA
= 5 mA; note 1
= 0
= 5 V; note 2
= 5 V; f = 100 MHz
= 5 V
= 5 V; R
j
note 1
= 150 C
CONDITIONS
S
= 2 k ;
100
100
100
400
125
220
420
MIN. TYP. MAX. UNIT
600
VALUE
500
4.5
Product specification
250
850
650
75
700
800
10
1.5
250
475
800
BCV62
15
5
100 nA
300 mV
650 mV
750 mV
820 mV
UNIT
K/W
nA
mV
mV
pF
MHz
dB
V
mV
A