BCV61 NXP Semiconductors, BCV61 Datasheet - Page 2

• Manufacturer Part Number: BCV61
• Description: Npn General Purpose Double Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN double transistor in a SOT143B plastic package.
PNP complement: BCV62.
MARKING
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 08
BCV61
BCV61A
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
NUMBER
stg
j
amb
Low current (max. 100 mA)
Low voltage (max. 30 V)
Matched pairs.
For use in applications where the working point must be
independent of temperature
Current mirrors.
CBO
CEO
EBS
tot
NPN general purpose double transistor
TYPE
collector-base voltage TR1
collector-emitter voltage TR1
emitter-base voltage
collector current (DC)
peak collector current
peak base current TR1
total power dissipation
storage temperature
junction temperature
operating ambient temperature
MARKING
CODE
1Mp
1Jp
PARAMETER
BCV61B
BCV61C
NUMBER
TYPE
MARKING
CODE
1Kp
1Lp
open emitter
open base
V
T
amb
CE
= 0
2
25 C; note 1
PINNING
CONDITIONS
handbook, halfpage
Fig.1 Simplified outline (SOT143B) and symbol.
PIN
1
2
3
4
Top view
4
collector TR2; base TR1 and TR2
collector TR1
emitter TR1
emitter TR2
1
3
2
65
65
MIN.
DESCRIPTION
MAM293
Product specification
TR1
30
30
6
100
200
200
250
+150
150
+150
3
2
MAX.
BCV61
TR2
V
V
V
mA
mA
mA
mW
1
4
C
C
C
UNIT