GS1332E E-Tech Electronics LTD, GS1332E Datasheet

no-image

GS1332E

Manufacturer Part Number
GS1332E
Description
N-channel Enhancement Mode Power Mosfet
Manufacturer
E-Tech Electronics LTD
Datasheet
1.GS1332E.pdf (4 pages)
G
N
Description
The GS1332E provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
*Simple Gate Drive
*Small Package Outline
*2KV ESD Rating (Per MIL-STD-883D)
Package Dimensions
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Thermal Resistance Junction-ambient
GS1332E
N
G
-
-
C
C
S
S
H
H
1
1
A
A
N
N
3
3
N
N
3
3
E
E
L
L
Parameter
Parameter
2
2
E
E
E
E
N
N
1,2
H
H
A
A
3
3
N
N
C
C
E
E
M
M
E
E
N
N
3
Max.
T
T
M
M
P
I
I
O
O
D
D
D
@T
@T
D
D
Symbol
Symbol
@T
Tj, Tstg
Rthj-a
E
E
V
V
I
DM
A
A
GS
DS
A
=25 :
=70 :
P
=25 :
P
O
O
W
W
E
E
R
R
M
M
-55 ~ +150
REF.
O
O
HE
Ratings
A1
A2
D
A
E
Value
0.003
S
S
0.35
600
470
360
2.5
20
±5
F
F
E
E
0.80
0.80
1.80
1.15
1.80
Min.
T
T
0
Millimeter
Pb Free Plating Product
Max.
1.10
0.10
1.00
2.20
1.35
2.40
BV
R
I
D
DS(ON)
ISSUED DATE :2005/03/10
REVISED DATE :2006/11/24C
REF.
Q1
DSS
L1
L
b
e
c
W/ :
Unit
Unit
: /W
mA
mA
W
0.15
0.25
0.10
Min.
V
V
A
:
0.15 BSC.
Millimeter
0.42 REF.
0.65 REF.
Page: 1/4
600m
600mA
Max.
0.35
0.40
0.25
20V

Related parts for GS1332E

Image
Part Number
Description
Manufacturer
Datasheet
Request R
GS105-821
Part Number:
GS105-821
Description:
Gs Series Surface Mount Power Inductors
Manufacturer:
ICE Components
Datasheet:
GS105-821.pdf (3 pages)
34063AP1
Part Number:
34063AP1
Description:
Manufacturer:
E-Tech Electronics LTD
Datasheet:
34063AP1.pdf (6 pages)
MMUN2211RLT1
Part Number:
MMUN2211RLT1
Description:
Bias Resistor Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
MMUN2211RLT1.pdf (8 pages)
gm2222a
Part Number:
gm2222a
Description:
Npn Epitaxial Planar Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
GM2222A.pdf (2 pages)
BAW156LT1
Part Number:
BAW156LT1
Description:
Monolithic Dual Switching Diode
Manufacturer:
E-Tech Electronics LTD
Datasheet:
BAW156LT1.pdf (2 pages)
GSD882SS
Part Number:
GSD882SS
Description:
Npn Epitaxial Planar Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
GSD882SS.pdf (3 pages)
GSD1624
Part Number:
GSD1624
Description:
Npn Epitaxial Planar Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
GSD1624.pdf (3 pages)
GSD669A
Part Number:
GSD669A
Description:
Npn Epitaxial Planar Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
GSD669A.pdf (3 pages)
GSD882S
Part Number:
GSD882S
Description:
Pnp Epitaxial Planar Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
GSD882S.pdf (2 pages)
GSD965
Part Number:
GSD965
Description:
Npn Epitaxial Planar Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
GSD965.pdf (2 pages)
GSD965A
Part Number:
GSD965A
Description:
Npn Epitaxial Planar Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
GSD965A.pdf (2 pages)
GSD965AA
Part Number:
GSD965AA
Description:
Npn Epitaxial Planar Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
GSD965AA.pdf (2 pages)
GSD1616A
Part Number:
GSD1616A
Description:
Npn Epitaxial Planar Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
GSD1616A.pdf (3 pages)
GSD1857
Part Number:
GSD1857
Description:
Npn Epitaxial Planar Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
GSD1857.pdf (1 page)
GSD2656
Part Number:
GSD2656
Description:
Npn Epitaxial Transistor
Manufacturer:
E-Tech Electronics LTD
Datasheet:
GSD2656.pdf (2 pages)

GS1332E Summary of contents

Page 1

... Description The GS1332E provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. Features *Simple Gate Drive *Small Package Outline *2KV ESD Rating (Per MIL-STD-883D) Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage ...

Page 2

... Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Parameter 2 Forward On Voltage Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t 10sec. GS1332E Symbol Min. Typ DSS - 0. ...

Page 3

... Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode GS1332E ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ...

Page 4

... Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GS1332E Fig 8. Typical Capacitance Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform ...

Related keywords