GI85T03 E-Tech Electronics LTD, GI85T03 Datasheet - Page 2

• Manufacturer Part Number: GI85T03
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: E-Tech Electronics LTD

Electrical Characteristics (Tj = 25 : : : : unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes: 1. Pulse width limited by safe operating area.
G
I
85T03
2. Pulse width 300us, duty cycle 2%.
Parameter
Parameter
2
2
2
2
175 :
2
)
Symbol
R
Symbol
BV
BV
V
T
T
DS(ON)
I
C
I
C
GS(th)
Q
Q
C
V
GSS
DSS
DSS
g
Q
d(on)
d(off)
Q
T
T
T
oss
DSS
iss
rss
SD
fs
gs
gd
g
r
f
rr
rr
/
Tj
Min.
Min.
1.0
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.018
2700
Typ.
11.2
Typ.
550
380
7.5
32
33
24
77
35
67
28
10
-
-
-
-
-
-
-
-
Max.
±100
4200
Max.
500
3.0
1.3
10
52
1
6
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V/ :
Unit
m
nA
uA
uA
nC
pF
nC
ns
ns
V
V
S
V
V
Reference to 25 : , I
V
V
V
V
V
V
V
I
V
V
V
I
V
R
R
V
V
f=1.0MHz
I
I
dI/dt=100A/ s
D
D
S
S
GS
DS
DS
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
DS
G
D
=30A
=30A
=45A, V
=30A, V
=0.5
=3.3
=0, I
=V
=10V, I
= ±20V
=30V, V
=24V, V
=10V, I
=4.5V, I
=24V
=4.5V
=15V
=10V
=0V
=25V
Test Conditions
Test Conditions
ISSUED DATE :2005/11/24
REVISED DATE :
GS
D
, I
=250uA
GS
GS
D
D
D
D
GS
GS
=30A
=45A
=250uA
=0V
=0V
=30A
=0
=0
Page: 2/4
D
=1mA