EFC4601 Sanyo Semiconductor Corporation, EFC4601 Datasheet

EFC4601

Manufacturer Part Number

EFC4601

Description

N-channel Silicon Mosfet

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.EFC4601.pdf (6 pages)

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Ordering number : ENA0537

EFC4601

Features

Specifications

Absolute Maximum Ratings at Ta=25°C

Electrical Characteristics at Ta=25°C

Marking : FA

Source-to-Source Voltage

Gate-to-Source Voltage

Source Current (DC)

Source Current (Pulse)

Total Dissipation

Channel Temperature

Storage Temperature

Source-to-Source Breakdown Voltage

Zero-Gate Voltage Source Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Source-to-Source On-State Resistance

•

2.5V drive.

Best suited for LiB charging and discharging switch.

Common-drain type.

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer ' s products or

equipment.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

V (BR)SSS

R SS (on)1

R SS (on)2

R SS (on)3

R SS (on)4

R SS (on)5

V GS (off)

Symbol

V GSS

V SSS

⏐ yfs ⏐

I SSS

I GSS

Tstg

I SP

Tch

P T

I S

SANYO Semiconductors

PW≤10μs, duty cycle≤1%

When mounted on ceramic substrate (5000mm

I S =1mA, V GS =0V

V SS =20V, V GS =0V

V GS =±8V, V SS =0V

V SS =10V, I S =1mA

V SS =10V, I S =3A

I S =3A, V GS =4.5V

I S =3A, V GS =4.0V

I S =3A, V GS =3.7V

I S =3A, V GS =3.1V

I S =3A, V GS =2.5V

EFC4601

Conditions

Test Circuit 1

Test Circuit 2

Test Circuit 3

Test Circuit 4

Test Circuit 5

✕0.8mm)

DATA SHEET

32608PE TI IM TC-00001280

min

23.5

0.5

Ratings

typ

Ratings

8.5

Continued on next page.

--55 to +150

max

±12

150

±10

1.6

1.3

No. A0537-1/6

Unit

mΩ

μA

°C

Related parts for EFC4601

EFC4601 Summary of contents

Page 1

... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN EFC4601 SANYO Semiconductors N-Channel Silicon MOSFET General-Purpose Switching Device ...

Page 2

... Source1 Gate1 3 : Gate2 4 : Source2 4 3 0.37 SANYO : EFCP1818-4CA-055 EFC4601 Symbol Conditions Ciss V SS =10V, f=1MHz Test Circuit 8 Coss V SS =10V, f=1MHz Test Circuit 8 Crss V SS =10V, f=1MHz Test Circuit (on) See specified Test Circuit. Test Circuit See specified Test Circuit. ...

Page 3

... G2 10V 1mA G1 S1 Test Circuit (on Test Circuit (on (off =10V PW=10μs D.C.≤1% G2 EFC4601 Test Circuit 2 I GSS (+) / (--) G2 G1 IT11565 Test Circuit 4 ⏐yfs⏐ IT11567 Test Circuit (S-S) 4. IT11569 OUT ...

Page 4

... Source-to-Source Voltage (on 100 =1. Gate-to-Source Voltage EFC4601 Coss G2 Capacitance bridge IT11972 * Note: Connect the mesurement terminal reversely IT11974 if you want to measure the FET2 side. 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.35 0.40 0.45 0.50 0 IT11976 100 Ta=25° ...

Page 5

... Total Gate Charge 1.8 When mounted on ceramic substrate ✕0.8mm) 2 (5000mm 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature °C EFC4601 = = 0.001 Forward Source-to-Source Voltage (S- ...

Page 6

... Note on usage : Since the EFC4601 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

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