HFA3135 Intersil Corporation, HFA3135 Datasheet - Page 4

• Manufacturer Part Number: HFA3135
• Description: Ultra High Frequency Matched Pair Transistors
• Manufacturer: Intersil Corporation

Electrical Specifications
NOTES:
Typical Performance Curves
DYNAMIC CHARACTERISTICS FOR HFA3135 (PNP)
Noise Figure
Current Gain-Bandwidth Product
Power Gain-Bandwidth Product
Base to Emitter Capacitance
Collector to Base Capacitance
3. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical for Information Only.
4. Measuring V
5. See Typical Performance Curves for more information.
20
18
16
14
12
10
FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO
8
6
4
2
0
0
0.5
Q
Q
1
2
EMITTER VOLTAGE
1.0
EBO
COLLECTOR TO EMITTER VOLTAGE (V)
PARAMETER
can degrade the transistor h
1.5
Q
Q
1
2
2.0
4
2.5
T
A
Q
Q
= 25°C (Continued)
1
2
3.0
Q
Q
1
2
3.5
T
A
Q
Q
FE
1
= 25°C, Unless Otherwise Specified
2
4.0
SYMBOL
and h
I
I
I
I
I
f
B
B
B
B
B
MAX
NF
f
= 200µA
= 160µA
= 120µA
= 80µA
= 40µA
T
HFA3134, HFA3135
4.5
FE
match.
5.0
f = 900MHz, I
-1V ≤ V
f = 900MHz, I
-1V ≤ V
I
I
V
V
C
C
BE
CB
= -10mA, V
= -10mA, V
TEST CONDITIONS
= 0.5V
= -3V
CE
CE
≤ -5V, Z
≤ -5V, Z
C
C
CE
CE
= -10mA,
= -1mA,
FIGURE 2. NPN COLLECTOR AND BASE CURRENTS vs
100m
100n
100p
100µ
10m
= -5V
= -5V
10µ
10n
10p
1m
S
S
1n
1µ
= 50Ω
= 50Ω
0.4
BASE TO EMITTER VOLTAGE
0.5
(NOTE 3)
LEVEL
TEST
BASE TO EMITTER VOLTAGE (V)
B
B
B
B
B
B
0.6
I
C
I
B
MIN
-
-
-
-
-
-
0.7
TYP
TBD
550
400
5.2
4.6
7
0.8
MAX
-
-
-
-
-
-
0.9
August 12, 2005
Q
Q
1
UNITS
2
GHz
GHz
FN4445.2
Q
dB
dB
fF
fF
Q
2
1
1.0