HFA3135 Intersil Corporation, HFA3135 Datasheet - Page 2

• Manufacturer Part Number: HFA3135
• Description: Ultra High Frequency Matched Pair Transistors
• Manufacturer: Intersil Corporation

Absolute Maximum Ratings
Collector to Emitter Voltage (R
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . .12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 4.5V
Collector Current . . . . . . . . . . . . . . . . . . . . . . . . 14mA at T
Base Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.7mA
ESD Rating
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to 85°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
Electrical Specifications
DC CHARACTERISTICS FOR HFA3134 (NPN)
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage (Note 4)
Collector-Cutoff-Current
Collector-Cutoff-Current
Emitter-Cutoff-Current (Note 5)
Collector to Collector Leakage
Collector to Emitter Saturation Voltage
Base to Emitter Voltage (Note 5)
Q
(Note 5)
Base to Emitter Voltage Drift
DC Forward-Current Transfer Ratio
(Note 5)
Q
Early Voltage
1. θ
2. If a transistor is used in a diode configuration, the collector must be connected to the base to avoid exceeding the maximum base current
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400V
(Per MIL-STD-883 Method 3015.7)
1
1
specification.
to Q
to Q
JA
is measured with the component mounted on an evaluation PC board in free air.
2
2
Base to Emitter Voltage Match
Current Transfer Ratio Match
PARAMETER
B
≤ 10kΩ to GND) . . . . . . . . . . . . 11V
2
T
A
= 25°C
26mA at T
V
V
V
V
SYMBOL
V
(BR)CBO
(BR)CEO
(BR)CER
(BR)EBO
CE(SAT)
∆V
∆h
I
I
I
V
CEO
CBO
EBO
h
V
BE
FE
HFA3134, HFA3135
J
J
FE
BE
A
=150°C
=125°C
I
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
1mA ≤ I
1V ≤ V
I
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
CE
CB
EB
= 10µA, I
= 10µA, I
= 100µA, I
= 100µA, R
= 10mA, I
= 10mA, V
= 10mA, V
= 1mA, V
= 0.1mA, V
= 10mA
= 10mA, V
= 1mA, V
= 0.1mA, V
= 10mA, V
= 1mA, V
= 0.1mA, V
= 1mA, ∆V
TEST CONDITIONS
= 1V, I
= 6V, I
= 8V, I
CE
C
≤ 10mA,
≤ 5V
B
E
C
Thermal Information
Thermal Resistance (Typical, Note 1)
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . . 175°C
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
E
C
CE
CE
CE
B
B
= 0
= 0
= 0
CE
CE
CE
CE
CE
= 0
= 0
CE
CE
CE
SOT23-6 Package . . . . . . . . . . . . . . . . . . . . . . . . . .
(Soldering 10s, Lead Tips Only)
B
= 1mA
= 0
= 2V
= 2V
= 5V
= 10kΩ
= 2V
= 2V
= 2V
= 5V
= 3V
= 2V
= 2V
= 5V
(NOTE 3)
LEVEL
TEST
C
C
A
A
A
B
A
A
B
A
A
A
A
A
A
A
A
A
A
A
A
A
MIN
12
11
48
48
48
48
48
48
20
-5
-5
4
-
-
-
-
-
-
-
-
-
-
TYP
780
-1.5
100
1.2
1.0
0.7
21
17
95
80
87
90
96
96
30
9
6
1
1
2
-
-
MAX
1000
250
200
200
200
200
200
200
5
5
6
6
6
8
-
-
-
-
-
-
-
-
August 12, 2005
θ
JA
UNITS
mV/°C
350
FN4445.2
(°C/W)
mV
mV
mV
mV
mV
nA
nA
pA
nA
%
V
V
V
V
V