IXTH5N100 IXYS Corporation, IXTH5N100 Datasheet
IXTH5N100
Manufacturer Part Number
IXTH5N100
Description
500V IGBT with diode
Manufacturer
IXYS Corporation
Datasheet
1.IXTH5N100.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTH5N100
Manufacturer:
IXYS
Quantity:
35 500
Company:
Part Number:
IXTH5N100A
Manufacturer:
IXYS
Quantity:
4 250
Company:
Part Number:
IXTH5N100A
Manufacturer:
IXYS
Quantity:
35 500
Standard
Power MOSFET
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
Symbol
V
V
I
I
R
DM
D25
GSS
DSS
GS
GSM
JM
stg
DSS
DGR
D
J
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
Mounting torque
Test Conditions
V
V
V
V
V
V
Pulse test, t 300 s, duty cycle d 2 %
J
J
C
C
C
GS
GS
GS
GS
DS
DS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
GS
, I
D
D
DC
D
= 250 A
= 3 mA
DSS
, V
= 0.5 I
DS
= 0
D25
GS
= 1 M
T
T
5N100
5N100A
J
J
= 25 C
= 125 C
(T
J
= 25 C, unless otherwise specified)
JM
IXTH / IXTM 5N100
IXTH / IXTM 5N100A
TO-204 = 18 g, TO-247 = 6 g
1000
min.
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
1000
1000
180
150
300
20
30
20
5
max.
100
250
4.5
2.4
2.0
1
mA
W
nA
V
V
V
V
A
A
V
V
C
C
C
C
A
TO-247 AD (IXTH)
TO-204 AA (IXTM)
G = Gate,
S = Source,
Features
l
l
l
l
l
Applications
l
l
l
l
Advantages
l
l
l
International standard packages
Low R
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
1000 V
1000 V
V
DSS
DS (on)
HDMOS
D
D = Drain,
TAB = Drain
5 A
5 A
I
D25
TM
G
process
93009C (4/96)
D (TAB)
R
2.4
2.0
DS(on)
1 - 4
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IXTH5N100 Summary of contents
Page 1
Standard Power MOSFET N-Channel Enhancement Mode Symbol Test Conditions 150 C DSS 150 C; R DGR J V Continuous GS V Transient GSM ...
Page 2
... D D25 38 0.25 Characteristic Values ( unless otherwise specified) J min. typ 100 V 900 R IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXTH 5 N100 IXTH 5 N100A IXTM 5 N100 IXTM 5 N100A TO-247 AD (IXTH) Outline max ...
Page 3
Fig. 1 Output Characteristics 10V 25° Volts DS Fig vs. Drain Current DS(on) 3 ...
Page 4
Fig.7 Gate Charge Characteristic Curve 500V 2. 10mA Gate Charge - nCoulombs Fig.9 Capacitance Curves ...