IXTA62N15PSN IXYS Corporation, IXTA62N15PSN Datasheet - Page 2

• Manufacturer Part Number: IXTA62N15PSN
• Description: Transistor Mosfet N-CH 150V 62A 3TO-263
• Manufacturer: IXYS Corporation

IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
IXYS MOSFETs and IGBTs are covered by
d(on)
d(off)
f
S
SM
r
rr
one or moreof the following U.S. patents:
fs
SD
iss
oss
rss
g(on)
gs
gd
thJC
thCK
RM
TO-263 (IXTA) Outline
Pins: 1 - Gate
Test Conditions
V
V
V
R
V
(TO-3P)
(TO-220)
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
-di/dt = 100 A/µs
V
F
F
DS
GS
GS
G
GS
GS
R
= I
= 25 A
= 100 V
= 10 V; I
= 10 Ω (External)
= 10 V, V
3 - Source
= 0 V, V
= 10 V, V
= 0 V
S
, V
GS
= 0 V,
D
DS
DS
DS
= 0.5 I
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
2 - Drain
4 - Drain
4,835,592
4,850,072
4,881,106
D25
, pulse test
DSS
DSS
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 0.5 I
= I
(T
Dim.
(T
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
D25
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
D25
14.61
Min.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
2.29
1.02
1.27
0.46
Millimeter
0
10.29
15.88
Max.
Min.
Min.
BSC
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
8.13
2.79
1.40
1.78
0.38
0.74
5,237,481
5,381,025
5,486,715
14
Characteristic Values
Characteristic Values
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
.018
2250
Inches
Typ.
0.21
0.25
0
660
185
typ.
150
2.0
24
27
38
76
35
70
20
38
6,162,665
6,259,123 B1
6,306,728 B1
Max.
BSC
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
.015
.029
Max.
Max.
0.42 K/W
150
1.5
62
K/W
K/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
IXTA 62N15P IXTP 62N15P
TO-220 (IXTP) Outline
TO-3P (IXTQ) Outline
6,683,344
6,710,405B2
6,710,463
Pins: 1 - Gate
3 - Source
6,727,585
IXTQ 62N15P
Tab - Drain
2 - Drain