IXFH 23N60Q IXYS Corporation, IXFH 23N60Q Datasheet - Page 2

• Manufacturer Part Number: IXFH 23N60Q
• Description: TRANS MOSFET N-CH 600V 23A 3TO-247 AD
• Manufacturer: IXYS Corporation

IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Min Recommended Footprint
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
RM
d(on)
d(off)
f
S
SM
r
rr
fs
thCK
SD
iss
oss
g(on)
gd
thJC
RM
rss
gs
Test Conditions
V
V
V
R
V
(TO-247)
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
F
F
GS
DS
GS
G
GS
GS
= I
= I
= 0 V
S
S,
= 10 V; I
= 10 V, V
= 1.5 Ω (External)
= 10 V, V
= 0 V, V
, V
-di/dt = 100 A/µs, V
GS
= 0 V,
D
DS
DS
DS
= 0.5 I
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
D25
DSS
, pulse test
DSS
R
, I
, I
= 100 V
D
D
(T
(T
= 0.5 I
= 0.5 I
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
D25
JM
D25
min.
Min.
10
Characteristic Values
Characteristic Values
3300
0.85
Typ.
0.25
typ.
410
130
20
20
20
45
20
90
20
45
8
0.31
max.
Max.
250
1.5
23
92
K/W
K/W
nC
nC
nC
µC
pF
pF
pF
n s
n s
n s
n s
n s
S
A
A
V
A
Terminals: 1 - Gate
TO-247 AD Outline
TO-268 Outline
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
3 - Source
IXFH 23N60Q
20.80
15.75
19.81
IXFT 23N60Q
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
1
.4
2
3
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
2 - Drain
Tab - Drain
.8
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
6,534,343
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216