IXBH 10N170 IXYS Corporation, IXBH 10N170 Datasheet - Page 3

• Manufacturer Part Number: IXBH 10N170
• Description: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
• Manufacturer: IXYS Corporation

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20
20
1 8
1 6
1 4
1 2
1 0
1 8
1 6
1 4
1 2
1 0
1 0
8
6
4
2
0
8
6
4
2
0
9
8
7
6
5
4
3
2
1
6
1
7
Fig. 5. Collector-to-Emitter Voltage
2
Fig. 3. Output Characteristics
Fig. 1. Output Characteristics
2
vs. Gate-to-Emiiter voltage
8
3
V
V
9
G E
G E
@ 125 Deg. C
@ 25 Deg. C
V
V
V
= 1 7V
= 1 7V
3
1 5V
1 3V
1 1 V
C E
1 5V
1 3V
1 1 V
C E
G E
4
1 0
T
- Volts
- Volts
- Volts
J
= 25
1 1
5
º
4
C
1 2
6
1 3
9V
7V
I
5
C
9V
7V
= 20A
1 0A
5A
7
1 4
1 5
8
6
1 7.5
1 2.5
0.8
0.6
7.5
2.5
70
60
50
40
30
20
1 .8
1 .6
1 .4
1 .2
20
1 0
1 5
1 0
0
5
0
1
-50
0
4
Fig. 4. Temperature Dependence of V
Fig. 2. Extended Output Characteristics
-25
T
2
J
V
= 1 25
-40
Fig. 6. Input Admittance
G E
25
5
I
= 1 5V
º
C
º
T
C
4
0
º
= 32A
C
J
C
- Degrees Centigrade
I
C
@ 25 deg. C
= 1 6A
25
6
V
V
V
6
G E
G E
C E
I
C
= 1 7V
= 8A
1 5V
- Volts
50
- Volts
8
IXBH 10N170
IXBT 10N170
7
75
1 0
1 00
1 2
1 1 V
1 3V
9V
7V
8
CE(sat)
1 25
1 4
1 50
1 6
9