CPV363 International Rectifier, CPV363 Datasheet - Page 2

• Manufacturer Part Number: CPV363
• Description: IGBT SIP MODULE Fast IGBT
• Manufacturer: International Rectifier

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CPV363MF
Electrical Characteristics @ T
Switching Characteristics @ T
Notes:
V
V
V
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
E
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
V
fe
V
(BR)CES
CE(on)
GE(th)
FM
on
off
ts
ts
g
ge
gc
ies
oes
res
rr
(rec)M
(BR)CES
GE(th)
limited by max. junction temperature.
( See fig. 20 )
Repetitive rating; V
/dt
/ T
/ T
J
J
Collector-to-Emitter Breakdown Voltage
Temp. Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temp. Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
GE
=20V, pulse width
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
V
Pulse width
R
To Order
CC
G
Index
= 23 , ( See fig. 19 )
Min. Typ. Max. Units
Min. Typ. Max. Units
600
=80%(V
3.0
6.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
C-150
0.69
0.44
210
300
280
550
670
100
220
180
116
1.5
1.9
1.6
-11
8.0
1.4
1.3
2.4
9.2
2.0
2.4
3.4
3.5
5.6
23
25
21
25
21
10
42
80
80
—
—
—
—
—
CES
80µs; duty factor
), V
2500
±500
250
300
450
120
180
600
1.6
5.5
1.7
1.6
5.9
3.2
6.0
30
15
60
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
GE
=20V, L=10µH,
mV/°C V
V/°C
A/µs
µA
nA
mJ
mJ
nC
nC
V
V
S
V
ns
ns
pF
ns
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
See Fig. 8
T
I
V
Energy losses include "tail" and
diode reverse recovery
See Fig. 9, 10, 11, 18
T
I
V
Energy losses include "tail" and
diode reverse recovery
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
GE
GE
CE
CE
CE
GE
GE
GE
CC
J
GE
J
GE
GE
CC
J
J
J
J
J
J
J
J
= 8.7A
= 16A
= 8.7A, T
= 12A
= 12A, T
= 16A
= 8.7A, V
= 8.7A, V
0.1%.
= 25°C
= 150°C,
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 0V, I
= 0V, I
= V
= V
= 100V, I
= 0V, V
= 0V, V
= 15V, R
= 15V, R
= 0V
= 30V
= ±20V
= 400V
Next Data Sheet
GE
GE
, I
, I
J
C
C
J
CC
CC
CE
CE
C
C
= 150°C
Conditions
Conditions
= 250µA
= 1.0mA
See Fig.
See Fig.
See Fig.
See Fig.
= 150°C
G
G
C
= 250µA
= 250µA
= 480V
= 480V
Pulse width 5.0µs,
= 600V
= 600V, T
single shot.
= 8.7A
= 23
= 23
17
See Fig. 9, 10, 11, 18
14
15
16
See Fig. 7
See Fig. 2, 5
V
J
See Fig. 13
di/dt = 200A/µs
GE
= 150°C
V
I
F
R
= 15V
= 12A
= 200V