CPV363 International Rectifier, CPV363 Datasheet
CPV363
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CPV363 Summary of contents
Page 1
... R (IGBT) Junction-to-Case, each IGBT, one IGBT in conduction JC R (DIODE) Junction-to-Case, each diode, one diode in conduction JC R (MODULE) Case-to-Sink, flat, greased surface CS Wt Weight of module Index Next Data Sheet CPV363MF 90° 125°C, Supply Voltage 360Vdc, ...
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... Previous Datasheet CPV363MF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temp. Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temp. Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
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... F re quenc y ( 0° ° 0 ate-to-E m itter V olta Fig Typical Transfer Characteristics C-151 To Order Next Data Sheet CPV363MF 3.7 2.8 S 1.9 0.9 0 100 µ ...
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... Previous Datasheet CPV363MF 100 ase Tem perature (° Fig Maximum Collector Current vs. Case Temperature 0 .05 0.0 2 0.1 0 ING ( MAL 0.01 0.00001 0.0001 Fig Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case Index 3 ...
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... Fig Typical Gate Charge vs. Gate-to-Emitter Voltage 10 1 -60 -40 - (° Fig Typical Switching Losses vs. Case Temperature C-153 To Order Next Data Sheet CPV363MF 8. ...
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... Previous Datasheet CPV363MF 50° lle itte rre Fig Typical Switching Losses vs. Collector-to-Emitter Current 100 10 1 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current ...
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... Fig Typical Recovery Current vs. di /dt f 10000 V = 200V 125° 25°C J 1000 F 100 10 1000 100 /dt Fig Typical di f C-155 To Order Next Data Sheet CPV363MF I = 24A 12A F 1000 di /dt - (A/µ 12A 24A F 1000 di /dt - (A/µs) f /dt vs. di /dt f ...
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... Previous Datasheet CPV363MF Same type device as D.U.T. 430µF 80% of Vce D.U.T. Fig. 18a - Test Circuit for Measurement off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on) t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining E ...