SPB80N06S2L11 Infineon Technologies, SPB80N06S2L11 Datasheet - Page 6

• Manufacturer Part Number: SPB80N06S2L11
• Description: OptiMOS Power-Transistor
• Manufacturer: Infineon Technologies

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
pF
10
10
10


36
28
24
20
16
12
8
4
0
-60
4
3
2
0
SPP80N06S2L-11
DS
= f (T
)
-20
5
D
GS
j
)
= 40 A, V
=0V, f=1 MHz
20
10
98%
60
typ
15
GS
C
C
C
iss
oss
rss
100
= 10 V
20
140 °C
V
T
V
Preliminary data
j
DS
200
30
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
10
10
10
10
V
1.2
0.8
0.4
A
2
0
-60
3
2
1
0
0
= f (T j )
SD
SPP80N06S2L-11
)
0.4
-20
GS
0.8
p
= V
= 80 µs
20
93
DS
1.2
T
T
T
T

j
j
j
j
SPB80N06S2L-11
A
SPP80N06S2L-11
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
60
1.6
465

100
2
A
2001-05-16
2.4
°C
V
V
T
SD
j
180
3