STP4A60S SemiWell Semiconductor Co., Ltd., STP4A60S Datasheet - Page 3

• Manufacturer Part Number: STP4A60S
• Description: Bi-Directional Triode Thyristor
• Manufacturer: SemiWell Semiconductor Co., Ltd.

10
10
10
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
35
30
25
20
15
10
-1
5
0
1
0
10
10
0.0
Fig 1. Gate Characteristics
0
Fig 3. On State Current vs.
Fig 5. Surge On-State Current Rating
0
θ
0.5
25 ℃
I+
I -
I -
: Conduction Angle
GT1
GT1
GT3
θ
Maximum Power Dissipation
( Non-Repetitive )
V
1.0
360°
GM
π
(7V)
θ
10
50Hz
1.5
RMS On-State Current [A]
1
25 ℃
I+
2
GT3
π
Gate Current [mA]
2.0
V
Time (cycles)
GD
(0.2V)
2.5
60Hz
10
1
P
G(AV)
10
3.0
2
(0.1W)
3.5
P
GM
4.0
(1.5W)
θ = 180
θ = 150
θ = 30
θ = 120
θ = 90
θ = 60
10
3
4.5
o
o
o
o
o
o
10
5.0
2
10
130
125
120
115
110
105
100
10
10
10
10
10
10
95
-1
2
1
0
0.5
3
2
1
0.0
-50
Fig 2. On-State Voltage
Fig 4. On State Current vs.
Fig 6. Gate Trigger Voltage vs.
125
0.5
θ
1.0
o
: Conduction Angle
C
Allowable Case Temperature
Junction Temperature
θ
1.0
360°
π
1.5
0
1.5
θ
RMS On-State Current [A]
25
Junction Temperature [
o
On-State Voltage [V]
C
2
2.0
π
2.0
STP4A60S
2.5
2.5
50
3.0
3.0
V
+
GT3
o
3.5
C]
3.5
100
4.0
θ = 120
θ = 150
θ = 180
θ = 30
θ = 60
θ = 90
V
V
V
4.0
4.5
+
-
-
GT1
GT3
GT1
o
o
o
o
o
o
5.0
3/5
150
4.5