APT15GP60S Microsemi Corporation, APT15GP60S Datasheet - Page 6

• Manufacturer Part Number: APT15GP60S
• Description: POWER MOS 7 IGBT
• Manufacturer: Microsemi Corporation

V
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
CC
Figure 23, Turn-off Switching Waveforms and Definitions
Switching Energy
Figure 21, Inductive Switching Test Circuit
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
t
90%
d(off)
TO-247 (B) Package Outline
Dimensions in Millimeters and (Inches)
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
I
C
90%
t
D.U.T.
f
6.15 (.242) BSC
4.50 (.177) Max.
V
1.01 (.040)
1.40 (.055)
CE
5.45 (.215) BSC
Collector Voltage
10%
Collector Current
2-Plcs.
Gate Voltage
APT15DF60
A
15.49 (.610)
16.26 (.640)
0
T
T
J
5.38 (.212)
6.20 (.244)
1.65 (.065)
2.13 (.084)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
Gate
Collector
Emitter
= 125 C
Figure 22, Turn-on Switching Waveforms and Definitions
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
0.46 (.018)
0.56 (.022)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Switching Energy
Figure 24, E
{3 Plcs}
D
1.22 (.048)
1.32 (.052)
3
10%
V
PAK (S) Package Outline
TEST
t
r
5%
100uH
A
Dimensions in Millimeters (Inches)
DRIVER*
10%
ON1
A
90%
15.95 (.628)
16.05(.632)
t
d(on)
Revised
4/18/95
Test Circuit
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
*DRIVER SAME TYPE AS D.U.T.
Gate
13.79 (.543)
13.99(.551)
Collector
5 %
Emitter
Collector Current
1.04 (.041)
1.15(.045)
1.27 (.050)
1.40 (.055)
Collector Voltage
V
CLAMP
Gate Voltage
I
C
APT15GP60B_S
13.41 (.528)
13.51(.532)
Revised
8/29/97
V
Heat Sink (Collector)
and Leads are Plated
CE
3.81 (.150)
4.06 (.160)
(Base of Lead)
D.U.T.
T
J
= 125 C
11.51 (.453)
11.61 (.457)
B