APT15GP60S Microsemi Corporation, APT15GP60S Datasheet - Page 4

• Manufacturer Part Number: APT15GP60S
• Description: POWER MOS 7 IGBT
• Manufacturer: Microsemi Corporation

FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 13, Turn-On Energy Loss vs Collector Current
700
600
500
400
300
200
100
900
800
700
600
500
400
300
200
100
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 9, Turn-On Delay Time vs Collector Current
18
16
14
12
10
30
25
20
15
10
8
6
4
2
0
5
0
0
0
I
I
5
5
0
0
CE
CE
I
V
L = 100 µH
R
CE
V
V
T
CE
G
E
CE
GE
J
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
T
= 125°C
, COLLECTOR TO EMITTER CURRENT (A)
on2
= 5 Ω
J
T
= 400V
V
= 25°C, V
= 400V
= +15V
J
GE
R
=125°C,V
7.5A
5
10
10
G
10
= 10V
, GATE RESISTANCE (OHMS)
E
E
T
on2
off
J
GE
=
10
30A
GE
15A
25 or 125°C,V
=10V
15
R
=10V
15
20
G
=
T
5Ω, L
T
15
J
J
V
T
R
L = 100 µH
=
=125°C, V
J
CE
G
25 or 125°C,V
T
= 25°C or 125°C
E
20
=
20
= 5Ω
30
GE
J
on2
= 400V
100
= 25°C, V
=
20
30A
V
15V
µ
H, V
GE
GE
=15V
= 15V
25
CE
25
40
GE
E
GE
25
E
off
=
=15V
off
=
400V
7.5A
15A
10V
30
30
30
50
FIGURE 16, Switching Energy Losses vs Junction Temperature
FIGURE 14, Turn Off Energy Loss vs Collector Current
100
700
600
500
400
300
200
100
700
600
500
400
300
200
100
FIGURE 10, Turn-Off Delay Time vs Collector Current
80
70
60
50
40
30
20
10
80
60
40
20
FIGURE 12, Current Fall Time vs Collector Current
0
0
0
0
-50
I
I
5
5
5
CE
CE
I
CE
V
V
R
V
V
L = 100 µH
R
E
V
R
L = 100 µH
R
CE
GE
CE
G
G
GE
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
E
on2
CE
G
G
, COLLECTOR TO EMITTER CURRENT (A)
= 5 Ω
= 5 Ω
on2
=
= 5Ω
= 400V
= 400V
= +15V
V
=
-25
T
15A
15V,T
= 400V
GE
5Ω, L
J
30A
, JUNCTION TEMPERATURE (°C)
10
10
10
T
=10V,T
J
J
=
=
=25°C
25°C, V
100
0
T
J
J
=125°C
µ
=
15
H, V
15
15
T
125°C, V
E
J
25
GE
off
=
T
CE
J
125°C, V
15A
=
=
=
10V or 15V
25°C, V
400V
GE
50
V
20
20
20
GE
=
V
GE
=
10V or 15V
GE
15V,T
GE
E
=
75
off
=
=
10V,T
10V or 15V
30A
E
10V or 15V
E
J
25
25
25
off
=125°C
on2
100
7.5A
J
=25°C
7.5A
125
30
30
30