APT15GP60BDQ1 Advanced Power Technology, APT15GP60BDQ1 Datasheet - Page 5

• Manufacturer Part Number: APT15GP60BDQ1
• Description: MOSFET
• Manufacturer: Advanced Power Technology

Case temperature
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
Junction
temp. ( ”C)
4,000
1,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0.60
0.50
0.40
0.30
0.20
0.10
(Watts)
500
100
Power
50
10
V
0
CE
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
10
RC MODEL
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.9
0.5
0.05
0.7
0.3
0.1
20
0.216
0.284
10
30
-4
40
SINGLE PULSE
0.00600
0.164
RECTANGULAR PULSE DURATION (SECONDS)
C ies
C oes
C res
50
10
-3
10
Figure 20, Operating Frequency vs Collector Current
292
100
-2
70
60
50
40
30
20
10
Figure 18, Minimim Switching Safe Operating Area
50
10
0
0
5
V
T
T
D = 50 %
V
R
J
C
CE
G
CE
10
= 125
= 75
= 5 Ω
100
= 400V
, COLLECTOR TO EMITTER VOLTAGE
I
C
°
f
f
F
P
°
C
15
, COLLECTOR CURRENT (A)
max1
max 2
C
max
diss
200
=
=
20
=
=
min(f
T
t
Note:
P
E
J
R
d (on )
diss
300
Peak T J = P DM x Z θJC + T C
on 2
−
θ
25
10
JC
T
−
Duty Factor D = t 1 / t 2
max1
+
+
C
-1
P
E
t
cond
30
r
0.05
400
, f
off
+
t 1
max 2
t
d(off )
35
t 2
500
)
+
40
t
f
600
45
1.0
700
50