APT15GP60BDQ1 Advanced Power Technology, APT15GP60BDQ1 Datasheet

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APT15GP60BDQ1

Manufacturer Part Number
APT15GP60BDQ1
Description
MOSFET
Manufacturer
Advanced Power Technology
Datasheet

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Part Number:
APT15GP60BDQ1
Manufacturer:
APT
Quantity:
15 500
The POWER MOS 7
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
Symbol
T
V
V
SSOA
(BR)CES
V
J
CE(ON)
V
GE(TH)
I
I
I
,T
I
I
P
CES
GES
T
CES
CM
C1
C2
GE
D
STG
L
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage (V
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs.
1
CE
CE
CE
APT Website - http://www.advancedpower.com
@ T
= V
= 600V, V
= 600V, V
GE
GE
• 100 kHz operation @ 400V, 19A
• 200 kHz operation @ 400V, 12A
• SSOA rated
C
C
C
GE
GE
= 150°C
= 15V, I
= 15V, I
J
= 25°C
= 110°C
, I
= ±20V)
= 150°C
C
= 1mA, T
GE
GE
GE
C
C
®
= 0V, I
= 0V, T
= 0V, T
= 15A, T
= 15A, T
IGBT
j
C
= 25°C)
j
j
= 25°C)
= 125°C)
= 500µA)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
C
= 25°C unless otherwise specified.
MIN
600
3
APT15GP60BDQ1
65A @ 600V
-55 to 150
G
TYP
4.5
2.2
2.1
±20
C
600
250
300
56
27
65
E
TO-247
±100
3000
MAX
500
2.7
6
G
600V
Amps
Watts
UNIT
UNIT
Volts
Volts
µA
nA
°C
C
E

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APT15GP60BDQ1 Summary of contents

Page 1

... 25° 600V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com TO-247 25°C unless otherwise specified. C APT15GP60BDQ1 600 ± 65A @ 600V 250 -55 to 150 300 MIN TYP MAX 600 3 4.5 6 2.2 2.7 2.1 500 2 3000 ±100 ...

Page 2

Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP Q 3 Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc SSOA Switching Safe Operating ...

Page 3

15V. 250µs PULSE TEST <0.5 % DUTY CYCLE =25° =-55° =125° 0.5 1 1 COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE ...

Page 4

V = 10V 15V 400V 25°C or 125° 5Ω 100 µ ...

Page 5

V , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.60 0.50 0.9 0.40 0.7 0.30 0.5 0.20 0.3 0.10 0.1 0. Figure ...

Page 6

APT15DF60 D.U.T. Figure 21, Inductive Switching Test Circuit 90% Gate Voltage Collector Voltage t t d(off) f 90% 10% Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Switching Energy Figure ...

Page 7

... RECTANGULAR PULSE DURATION (seconds) RC MODEL Junction temp (°C) 0.725 °C/W Power 0.455 °C/W (watts) 0.172 °C/W Case temperature (°C) FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL APT15GP60BDQ1 = 25°C unless otherwise specified. C APT15GP60BDQ1 15 30 110 MIN TYP MAX 2.0 2.5 1.6 MIN TYP MAX = 25° ...

Page 8

T = 150° 125° 25° -55° ANODE-TO-CATHODE VOLTAGE (V) F Figure 26. Forward Current vs. Forward Voltage ...

Page 9

... BSC 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 0.40 (.016) 19.81 (.780) 0.79 (.031) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT15GP60BDQ1 D.U. Waveform PEARSON 2878 CURRENT TRANSFORMER 4 5 0.25 I RRM 3 2 5.38 (.212) 6.20 (.244) 3.55 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 1 ...

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