74AUP1T34GW,125 NXP Semiconductors, 74AUP1T34GW,125 Datasheet
74AUP1T34GW,125
Specifications of 74AUP1T34GW,125
74AUP1T34GW-G
935280516125
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74AUP1T34GW,125 Summary of contents
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Low-power dual supply translating buffer Rev. 2 — 19 August 2010 1. General description The 74AUP1T34 provides a single buffer with two separate supply voltages. Input A is designed to track V accepts any supply voltage from 1.1 V ...
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... NXP Semiconductors 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name −40 °C to +125 °C 74AUP1T34GW −40 °C to +125 °C 74AUP1T34GM −40 °C to +125 °C 74AUP1T34GF −40 °C to +125 °C 74AUP1T34GN −40 °C to +125 °C 74AUP1T34GS 4. Marking Table 2. Marking ...
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... NXP Semiconductors 6. Pinning information 6.1 Pinning 74AUP1T34 CC(A) CC( GND Y 001aad741 Fig 4. Pin configuration SOT353-1 6.2 Pin description Table 3. Pin description Symbol Pin TSSOP5 V 1 CC( GND n. CC(Y) 7. Functional description [1] Table 4. Function table Input [ HIGH voltage level LOW voltage level. 74AUP1T34 Product data sheet ...
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... NXP Semiconductors 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage A CC(A) V supply voltage Y CC(Y) I input clamping current IK V input voltage I I output clamping current OK V output voltage ...
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... NXP Semiconductors 9. Recommended operating conditions Table 6. Recommended operating conditions Symbol Parameter V supply voltage A CC(A) V supply voltage Y CC(Y) V input voltage I V output voltage O T ambient temperature amb Δt/ΔV input transition rise and fall rate control and data inputs; 10. Static characteristics Table 7. ...
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... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions I power-off A input; V OFF leakage current V CC(A) Y output 3 ΔI additional A input; V OFF power-off V CC(A) leakage current Y output 3 supply current port CC(A) V CC(A) V CC(A) port CC(A) ...
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... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions V LOW-level output voltage = 20 μ 1.1 mA 1.7 mA 1.9 mA 2.3 mA 3.1 mA 2.7 mA 4.0 mA input leakage 3 current I power-off A input; V OFF leakage current V CC(A) Y output 3 ΔI additional A input; V ...
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... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions V HIGH-level output voltage = −20 μ −1.1 mA −1.7 mA −1.9 mA −2.3 mA −3.1 mA −2.7 mA −4.0 mA LOW-level output voltage = 20 μ 1.1 mA 1.7 mA 1.9 mA 2.3 mA 3.1 mA 2.7 mA 4.0 mA input leakage 3.6 V ...
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... NXP Semiconductors 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions CC(A) t propagation delay see CC(A) t propagation delay see CC(A) t propagation delay see CC(A) t propagation delay see pF 3 3.6 V ...
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... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions CC(A) t propagation delay see CC(A) t propagation delay see CC(A) t propagation delay see CC(A) t propagation delay see CC(A) t propagation delay see ...
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... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions CC(A) t propagation delay see CC(A) t propagation delay see CC(A) t propagation delay see CC(A) t propagation delay see CC(A) t propagation delay see ...
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... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions CC(A) t propagation delay see CC(A) t propagation delay see CC(A) t propagation delay see CC(A) t propagation delay see CC(A) t propagation delay see ...
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... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions pF and power dissipation MHz capacitance [1] All typical values are measured at nominal V [ the same as t and PLH PHL [3] All specified values are the average typical values over all stated loads. ...
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... NXP Semiconductors Test data is given in Table Definitions for test circuit Load resistance Load capacitance including jig and probe capacitance Termination resistance should be equal to the output impedance External voltage for measuring switching times. EXT Fig 8. Test circuit for measuring switching times Table 10. ...
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... NXP Semiconductors 13. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1. DIMENSIONS (mm are the original dimensions UNIT max. 0.1 1.0 mm 1.1 0.15 0 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION IEC SOT353-1 Fig 9 ...
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... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. 6× (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT b D max max 0.25 1.5 mm 0.5 0.04 0.17 1.4 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. ...
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... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 0 6× (1) terminal 1 index area DIMENSIONS (mm are the original dimensions UNIT b D max max 0.20 1.05 mm 0.5 0.04 0.12 0.95 Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION IEC SOT891 Fig 11 ...
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... NXP Semiconductors XSON6: extremely thin small outline package; no leads; 6 terminals; body 0.9 x 1 (6×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 0.95 mm nom 0.15 0.90 min 0.12 0.85 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. ...
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... NXP Semiconductors XSON6: extremely thin small outline package; no leads; 6 terminals; body 1.0 x 1 (6×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 1.05 mm nom 0.15 1.00 min 0.12 0.95 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. ...
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... NXP Semiconductors 14. Abbreviations Table 11. Abbreviations Acronym Description CDM Charged Device Model DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model 15. Revision history Table 12. Revision history Document ID Release date 74AUP1T34 v.2 20100819 • Modifications: Added type number 74AUP1T34GN (SOT1115/XSON6 package). ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...
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... NXP Semiconductors Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 17. Contact information For more information, please visit: For sales office addresses, please send an email to: 74AUP1T34 Product data sheet 16 ...
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... NXP Semiconductors 18. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Functional description . . . . . . . . . . . . . . . . . . . 3 8 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 9 12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 Package outline ...