SPD07N20G Infineon Technologies AG, SPD07N20G Datasheet

SPD07N20G

Manufacturer Part Number

SPD07N20G

Description

Manufacturer

Infineon Technologies AG

Datasheet

1.SPD07N20G.pdf (10 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SPD07N20G

Manufacturer:

INFINEON

Quantity:

12 500

Current page: 1 of 10
Download datasheet (831Kb)

Rev. 2.4

Features

• N channel

•

• Avalanche rated

• d v /d t rated

Type

SPD07N20 G

SPU07N20 G

Avalanche energy, periodic limited by T

Reverse diode d v /d t

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

SIPMOS® Power Transistor

Maximum Ratings, at T j = 25 ˚C, unless otherwise specified

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Enhancement mode

jmax

= 7 A, V

= 25 ˚C

= 100 ˚C

= 25 ˚C

= 175 ˚C

= 160 V, d i /d t = 200 A/µs,

= 50 V, R

PG-TO252

PG-TO251

Package

= 25 Ω

Product Summary

Drain source voltage

Drain-Source on-state resistance

Continuous drain current

Yes

Pb-free

jmax

Page 1

d v /d t

Symbol

Dpulse

j ,

tot

Tube

Packaging

Tape and Reel

stg

-55... +175

55/150/56

Value

±20

120

4.5

DS(on)

Pin 1 Pin 2 Pin 3

SPD 07N20 G

200

0.4

2008-09-01

˚C

kV/µs

Unit

Ω

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SPD07N20G Summary of contents

Page 1

SIPMOS® Power Transistor Features • N channel • Enhancement mode • Avalanche rated • rated Type Package SPD07N20 G PG-TO252 SPU07N20 G PG-TO251 Maximum Ratings ˚C, unless otherwise specified Parameter Continuous ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics ˚C, unless otherwise ...

Page 3

Electrical Characteristics ˚C, unless otherwise specified Parameter Dynamic Characteristics Transconductance ≥ 4 DS(on)max D Input capacitance ...

Page 4

Electrical Characteristics ˚C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge V = 160 Gate to drain charge V = 160 ...