SPD07N20G Infineon Technologies AG, SPD07N20G Datasheet
SPD07N20G
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SPD07N20G Summary of contents
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SIPMOS® Power Transistor Features • N channel • Enhancement mode • Avalanche rated • rated Type Package SPD07N20 G PG-TO252 SPU07N20 G PG-TO251 Maximum Ratings ˚C, unless otherwise specified Parameter Continuous ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics ˚C, unless otherwise ...
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Electrical Characteristics ˚C, unless otherwise specified Parameter Dynamic Characteristics Transconductance ≥ 4 DS(on)max D Input capacitance ...
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Electrical Characteristics ˚C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge V = 160 Gate to drain charge V = 160 ...
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Power Dissipation tot C SPD07N20 Safe operating area parameter : D ...
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Typ. output characteristics parameter µs p SPD07N20 tot ...
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Drain-source on-resistance DS(on) j parameter : SPD07N20 1.8 Ω 1.4 1.2 1.0 0.8 98% 0.6 typ 0.4 0.2 0.0 -60 - Typ. capacitances C = ...
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Avalanche Energy parameter Ω 130 mJ 110 100 ...
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Package outline: PG-TO252-3 Rev. 2.4 Page 9 SPD 07N20 G 2008-09-01 ...
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Rev. 2.4 Page 10 SPD 07N20 G 2008-09-01 ...