RD07MVS1 Mitsumi Electronics, Corp., RD07MVS1 Datasheet
RD07MVS1
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RD07MVS1 Summary of contents
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. FEATURES High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz) APPLICATION For output stage of high power amplifiers in VHF/UHF band mobile radio sets ...
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... Drain efficiency KD1 Pout2 Output power Drain efficiency KD2 Load VSWR tolerance Load VSWR tolerance Note : Above parameters , ratings , limits and conditions are subject to change. RD07MVS1 MITSUBISHI RF POWER MOS FET RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W CONDITIONS RATINGS Vgs=0V 30 Vds=0V +/- 20 Tc=25 50 °C Zg=Zl=50 1 ...
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... Vds(V) Vds VS. Coss CHARACTERISTICS 120 Ta=+25°C f=1MHz 100 Vds(V) RD07MVS1 MITSUBISHI RF POWER MOS FET RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W Vgs-Ids CHARACTERISTICS 10.0 Ta=+25°C Vds=10V 8.0 6.0 4.0 2.0 0.0 160 200 0 Vds VS. Ciss CHARACTERISTICS 160 Vgs=5V Ta=+25°C 140 f=1MHz 120 Vgs=4.5V ...
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... Idq=750mA Pin(dBm) Vdd-Po CHARACTERISTICS @f=175MHz 30 Ta=25°C f=175MHz 25 Pin=0.3W Icq=700mA 20 Zg=ZI=50 ohm Vdd(V) RD07MVS1 MITSUBISHI RF POWER MOS FET RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W Pin-Po CHARACTERISTICS 12.0 80 10.0 60 8.0 3 6.0 40 4 0.0 0 Pin-Po CHARACTERISTICS 14.0 80 12.0 10 8.0 40 6.0 4.0 20 2.0 ...
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, TYPICAL CHARACTERISTICS Vgs-Ids CHARACTORISTICS 2 10 Vds=10V Tc=-25~+75° Vgs(V) RD07MVS1 MITSUBISHI RF POWER MOS FET RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W -25°C +25°C +75° MITSUBISHI ELECTRIC 5/9 10 Jan 2006 ...
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... RD 07MVS1 22pF 175MHz 3m m 3.5m m 11.5m m 68O HM 22pF 180pF Note:Board m aterial- Teflon substrate Micro strip line width=2.2m m /50O HM,er:2.7,t=0. :line width=1.0m m 20pF RD07MVS1 520MHz 6.5m m 3.5m m 3.5m m 3.5m m 20pF 10pF Note:Board m aterial- Teflon substrate Micro strip line width=2.2m m /50O HM,er:2.7,t=0. :ine width=1.0m m MITSUBISHI ELECTRIC 6/9 ...
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... Zin* Zout* Zo=10: 520MHz Zin* Zout* Zo=10: 520MHz Zin* 520MHz Zout* RD07MVS1 MITSUBISHI RF POWER MOS FET RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W Vdd=7.2V, Idq=700mA(Vgg adj.),Pin=0.28W Zin*=1.55+j5.53 Zout*=3.24-j0.26 175MHz Zin* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance 175MHz Zout* Vdd=7 ...
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=750mA) Freq. S11 [MHz] (mag) (ang) 100 0.890 -174.1 150 0.897 -175.6 175 0.899 -176.0 200 0.901 -176.3 250 0.907 -176.7 300 0.913 -177.0 350 0.918 -177.3 400 0.924 -177 ...
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... These results causes in fire or injury. RD07MVS1 MITSUBISHI RF POWER MOS FET RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W warning ! MITSUBISHI ELECTRIC ...