RD02MUS1 Mitsumi Electronics, Corp., RD02MUS1 Datasheet
RD02MUS1
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RD02MUS1 Summary of contents
Page 1
... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DESCRIPTION RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. FEATURES High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz High Efficiency:65%typ.(175MHz) High Efficiency:65%typ.(520MHz) ...
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... Output power Drain efficiency K D1 Pout2 Output power Drain efficiency K D2 Load VSWR tolerance Load VSWR tolerance Note : Above parameters , ratings , limits and conditions are subject to change. RD02MUS1 MITSUBISHI RF POWER MOS FET RD02MUS1 CONDITIONS RATINGS UNIT Vgs= Vds=0V +/-20 V Tc=25 21.9 W °C Zg=Zl=50 0 ...
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... Vds-Ids CHARACTERISTICS 5.0 4.5 Ta=+25°C 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 Vds(V) Vds VS. Coss CHARACTERISTICS 40 Ta=+25°C f=1MHz Vds(V) RD02MUS1 MITSUBISHI RF POWER MOS FET RD02MUS1 Vgs-Ids CHARACTERISTICS 3.0 Ta=+25°C Vds=7.2V 2.5 2.0 1.5 1.0 0.5 0 160 200 Vds VS. Ciss CHARACTERISTICS Vgs=9V 40 Vgs=8V Ta=+25°C f=1MHz Vgs=7V 30 Vgs=6V 20 Vgs=5V 10 Vgs=4V Vgs= Vds VS ...
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... Pin(dBm) Vdd-Po CHARACTERISTICS @f=175MHz 7 Ta=25°C 6 f=175MHz Pin=50mW Idq=200mA 5 Zg=ZI=50 ohm Vdd(V) RD02MUS1 MITSUBISHI RF POWER MOS FET RD02MUS1 Pin-Po CHARACTERISTICS 4.0 100 2.0 50 Ta=+25°C 1.0 40 f=175MHz 30 Vdd=7.2V Idq=200mA 20 0 Pin-Po CHARACTERISTICS 4.0 100 90 3 ...
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... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W TYPICAL CHARACTERISTICS Vgs-Ids CHARACTORISTICS 2 4 Vds=10V Tc=-25~+75° Vgs(V) RD02MUS1 MITSUBISHI RF POWER MOS FET RD02MUS1 -25°C +25°C +75° MITSUBISHI ELECTRIC 5/9 10 Jan 2006 ...
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... L3: Enam eled wire 9Turns,D:0.43m m ,2.46m 1,C 2:1000pF,0.0022uF in parallel TEST CIRCUIT(f=520MHz 26.5m m 20m m RF-IN 62pF 6pF L1: Enam eled wire 9Turns,D :0.43m m ,2.46m C1,C 2:1000pF,0.022uF in parallel RD02MUS1 MITSUBISHI RF POWER MOS FET RD02MUS1 Vdd C2 19m m 15m 02MVS1 10pF L3 175MHz 5m m 12m 11.5m m ...
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... Zo=50: 175MHz Zout* 520MHz Zin* Zout* Zo=50: 520MHz Zin* 520MHz Zout* RD02MUS1 MITSUBISHI RF POWER MOS FET RD02MUS1 Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W Zin*=11.61+j17.88 Zout*=6.83+j5.21 Zin*: Complex conjugate of input impedance 175MHz Zin* Zout*: Complex conjugate of input impedance Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W Zin*=1.20+j5.47 Zout*=5 ...
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... RD02MUS1 MITSUBISHI RF POWER MOS FET RD02MUS1 S21 S12 (mag) (ang) (mag) (ang) 16.154 102.5 0.039 14.9 11.503 92.9 0.040 5.9 9.965 89.3 0.040 2.7 8.689 86.2 0.040 -0 ...
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... These results causes in fire or injury. RD02MUS1 MITSUBISHI RF POWER MOS FET RD02MUS1 warning ! MITSUBISHI ELECTRIC 9/9 10 Jan 2006 ...