M29W640DB90N6 STMicroelectronics, M29W640DB90N6 Datasheet

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M29W640DB90N6

Manufacturer Part Number
M29W640DB90N6
Description
Manufacturer
STMicroelectronics
Datasheet

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FEATURES SUMMARY
December 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
SUPPLY VOLTAGE
– V
– V
ACCESS TIME: 90 ns
PROGRAMMING TIME
– 10 µs per Byte/Word typical
– Double Word Programming Option
135 MEMORY BLOCKS
– 1 Boot Block and 7 Parameter Blocks,
– 127 Main Blocks, 64 KBytes each
PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithms
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
V
PROTECT
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
– 64-bit Security Code
EXTENDED MEMORY BLOCK
– Extra block used as security block or to store
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W640DT: 22DEh
– Bottom Device Code M29W640DB: 22DFh
PP
8 KBytes each (Top or Bottom Location)
Erase Suspend
additional information
CC
PP
/WP Pin for FAST PROGRAM and WRITE
= 2.7V to 3.6V for Program, Erase, Read
=12 V for Fast Program (optional)
64 Mbit (8Mb x8 or 4Mb x16, Boot Block)
Figure 1. Packages
3V Supply Flash Memory
TFBGA63 (ZA)
TSOP48 (N)
63 ball array
12 x 20mm
M29W640DB
M29W640DT
FBGA
PRELIMINARY DATA
1/50

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M29W640DB90N6 Summary of contents

Page 1

FEATURES SUMMARY SUPPLY VOLTAGE – 2.7V to 3.6V for Program, Erase, Read CC – V =12 V for Fast Program (optional) PP ACCESS TIME PROGRAMMING TIME – 10 µs per Byte/Word typical – Double Word Programming ...

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M29W640DT, M29W640DB TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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Unlock Bypass Command ...

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M29W640DT, M29W640DB Figure 15.TFBGA63 7x11mm - 6x8 active ball array, 0.8mm pitch, Package Outline Table 17. TFBGA63 7x11mm - 6x8 active ball array, 0.8mm pitch, Package Mechanical Data . ...

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SUMMARY DESCRIPTION The M29W640D Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be per- formed using a single low voltage (2.7 to 3.6V) supply. On power-up the ...

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M29W640DT, M29W640DB Figure 3. TSOP Connections V PP /WP 6/50 A15 1 48 A14 A13 A12 A11 A10 A9 A8 A19 M29W640DT A20 M29W640DB A21 A18 A17 ...

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Figure 4. TFBGA Connections (Top view through package) 8 (1) ( (1) ( A13 ( (1) ( Note: ...

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M29W640DT, M29W640DB SIGNAL DESCRIPTIONS See Figure 2, Logic Diagram, and Table 1, Signal Names, for a brief overview of the signals connect this device. Address Inputs (A0-A21). The Address Inputs select the cells in the memory array to ...

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After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy be- comes high-impedance. See Table 15 and Figure 12, Reset/Block Temporary Unprotect AC Charac- teristics. The use of an open-drain output allows the Ready/ Busy pins ...

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M29W640DT, M29W640DB BUS OPERATIONS There are five standard bus operations that control the device. These are Bus Read, Bus Write, Out- put Disable, Standby and Automatic Standby. See Table 2 and Table 3, Bus Operations, for a sum- mary. Typically ...

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Table 2. Bus Operations, BYTE = V Operation E V Bus Read IL V Bus Write IL Output Disable X V Standby IH Read Manufacturer V IL Code V Read Device Code IL Extended Memory V IL Block Verify Code ...

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M29W640DT, M29W640DB COMMAND INTERFACE All Bus Write operations to the memory are inter- preted by the Command Interface. Commands consist of one or more sequential Bus Write oper- ations. Failure to observe a valid sequence of Bus Write operations will ...

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Quadruple Byte Program Command. The Qua- druple Byte Program command is used to write a page of four adjacent Bytes in parallel. The four bytes must differ only for addresses A0, DQ15A-1. Five bus write cycles are necessary to issue ...

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M29W640DT, M29W640DB mand not possible to issue any command to abort the operation. Typical chip erase times are given in Table 6. All Bus Read operations during the Chip Erase operation will output the Status Register on the ...

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The Extended Block can be protected, however once protected the protection cannot be undone. Exit Extended Block Command The Exit Extended Block command is used to exit from the Extended Block mode and return the de- vice to Read mode. ...

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M29W640DT, M29W640DB Table 4. Commands, 16-bit mode, BYTE = V Command Addr 1 X Read/Reset 3 555 Auto Select 3 555 Program 4 555 Double Word Program 3 555 Unlock Bypass 3 555 Unlock Bypass 2 X Program Unlock Bypass ...

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Table 5. Commands, 8-bit mode, BYTE = V Command Add 1 Read/Reset 3 AAA Auto Select 3 AAA Program 4 AAA Quadruple Byte Program 5 AAA Unlock Bypass 3 AAA Unlock Bypass Program 2 Unlock Bypass Reset 2 Chip Erase ...

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M29W640DT, M29W640DB STATUS REGISTER Bus Read operations from any address always read the Status Register during Program and Erase operations also read during Erase Sus- pend when an address within a block being erased is accessed. The bits ...

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Operation Program During Erase Any Address Suspend Program Error Any Address Chip Erase Any Address Erasing Block Block Erase before timeout Non-Erasing Block Erasing Block Block Erase Non-Erasing Block Erasing Block Erase Suspend Non-Erasing Block Good Block Address Erase Error ...

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... Maximum voltage may overshoot must not remain at 12V for more than a total of 80hrs. PP 20/50 these or any other conditions above those indicat the Operating sections of this specification is not implied. Refer also to the STMicroelectronics SURE Program and other relevant quality docu- ments. Parameter (1) (3,4) ® ...

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DC AND AC PARAMETERS This section summarizes the operating and mea- surement conditions, and the DC and AC charac- teristics of the device. The parameters in the DC and AC Characteristic tables that follow are de- rived from tests performed ...

Page 22

M29W640DT, M29W640DB Table 11. DC Characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO I Supply Current (Read) CC1 I Supply Current (Standby) CC2 Supply Current (Program/ I CC3 Erase) V Input Low Voltage IL V ...

Page 23

Figure 9. Read Mode AC Waveforms A0-A20/ A– DQ0-DQ7/ DQ8-DQ15 BYTE tELBL/tELBH Table 12. Read AC Characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC ...

Page 24

M29W640DT, M29W640DB Figure 10. Write AC Waveforms, Write Enable Controlled A0-A20/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB Table 13. Write AC Characteristics, Write Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV ...

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Figure 11. Write AC Waveforms, Chip Enable Controlled A0-A20/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB Table 14. Write AC Characteristics, Chip Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV WC t ...

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M29W640DT, M29W640DB Figure 12. Reset/Block Temporary Unprotect AC Waveforms tPLPX RP Table 15. Reset/Block Temporary Unprotect AC Characteristics Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable Low, Output t t PHEL ...

Page 27

PACKAGE MECHANICAL Figure 14. TSOP48 – 48 lead Plastic Thin Small Outline 20mm, Package Outline 1 N/2 TSOP-a Note: Drawing is not to scale. Table 16. TSOP48 – 48 lead Plastic Thin Small Outline 20mm, Package ...

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M29W640DT, M29W640DB Figure 15. TFBGA63 7x11mm - 6x8 active ball array, 0.8mm pitch, Package Outline BALL "A1" Note: Drawing is not to scale. Table 17. TFBGA63 7x11mm - 6x8 active ball array, 0.8mm pitch, Package Mechanical Data ...

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PART NUMBERING Table 18. Ordering Information Scheme Example:M29W640DB Device Type M29 Operating Voltage 2.7 to 3.6V CC Device Function 640D = 64 Mbit (x8/x16), Boot Block Array Matrix T = Top Boot B = Bottom Boot ...

Page 30

M29W640DT, M29W640DB APPENDIX A. BLOCK ADDRESSES Table 19. Top Boot Block Addresses, M29W640DT KBytes/ Block KWords 0 64/32 1 64/32 2 64/32 3 64/32 4 64/32 5 64/32 6 64/32 7 64/32 8 64/32 9 64/32 10 64/32 11 64/32 ...

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KBytes/ Protection Block Block KWords 32 64/32 33 64/32 Protection Group 34 64/32 35 64/32 36 64/32 37 64/32 Protection Group 38 64/32 39 64/32 40 64/32 41 64/32 Protection Group 42 64/32 43 64/32 44 64/32 45 64/32 Protection ...

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M29W640DT, M29W640DB KBytes/ Block KWords 64 64/32 65 64/32 66 64/32 67 64/32 68 64/32 69 64/32 70 64/32 71 64/32 72 64/32 73 64/32 74 64/32 75 64/32 76 64/32 77 64/32 78 64/32 79 64/32 80 64/32 81 ...

Page 33

KBytes/ Protection Block Block KWords 96 64/32 97 64/32 Protection Group 98 64/32 99 64/32 100 64/32 101 64/32 Protection Group 102 64/32 103 64/32 104 64/32 105 64/32 Protection Group 106 64/32 107 64/32 108 64/32 109 64/32 Protection ...

Page 34

M29W640DT, M29W640DB KBytes/ Block KWords 124 64/32 125 64/32 126 64/32 127 8/4 128 8/4 129 8/4 130 8/4 131 8/4 132 8/4 133 8/4 134 8/4 Note: 1. Used as the Extended Block Addresses in Extended Block mode. Table ...

Page 35

KBytes/ Protection Block Block KWords 15 64/32 16 64/32 Protection Group 17 64/32 18 64/32 19 64/32 20 64/32 Protection Group 21 64/32 22 64/32 23 64/32 24 64/32 Protection Group 25 64/32 26 64/32 27 64/32 28 64/32 Protection ...

Page 36

M29W640DT, M29W640DB KBytes/ Block KWords 47 64/32 48 64/32 49 64/32 50 64/32 51 64/32 52 64/32 53 64/32 54 64/32 55 64/32 56 64/32 57 64/32 58 64/32 59 64/32 60 64/32 61 64/32 62 64/32 63 64/32 64 ...

Page 37

KBytes/ Protection Block Block KWords 79 64/32 80 64/32 Protection Group 81 64/32 82 64/32 83 64/32 84 64/32 Protection Group 85 64/32 86 64/32 87 64/32 88 64/32 Protection Group 89 64/32 90 64/32 91 64/32 92 64/32 Protection ...

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M29W640DT, M29W640DB KBytes/ Block KWords 111 64/32 112 64/32 113 64/32 114 64/32 115 64/32 116 64/32 117 64/32 118 64/32 119 64/32 120 64/32 121 64/32 122 64/32 123 64/32 124 64/32 125 64/32 126 64/32 127 64/32 128 ...

Page 39

APPENDIX B. COMMON FLASH INTERFACE (CFI) The Common Flash Interface is a JEDEC ap- proved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical ...

Page 40

M29W640DT, M29W640DB Table 23. CFI Query System Interface Information Address Data x16 x8 1Bh 36h 0027h 1Ch 38h 0036h 1Dh 3Ah 00B5h 1Eh 3Ch 00C5h 1Fh 3Eh 0004h 20h 40h 0000h 21h 42h 000Ah 22h 44h 0000h 23h 46h 0004h ...

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Table 24. Device Geometry Definition Address Data x16 x8 27h 4Eh 0017h 28h 50h 0002h 29h 52h 0000h 2Ah 54h 0000h 2Bh 56h 0000h 2Ch 58h 0002h 2Dh 5Ah 0007h 2Eh 5Ch 0000h 2Fh 5Eh 0020h 30h 60h 0000h 31h ...

Page 42

M29W640DT, M29W640DB Table 25. Primary Algorithm-Specific Extended Query Table Address Data x16 x8 40h 80h 0050h 41h 82h 0052h 42h 84h 0049h 43h 86h 0031h 44h 88h 0033h 45h 8Ah 0000h 46h 8Ch 0002h 47h 8Eh 0004h 48h 90h 0001h ...

Page 43

APPENDIX C. EXTENDED MEMORY BLOCK The M29W640D has an extra block, the Extended Block, that can be accessed using a dedicated command. This Extended Block is 32 KWords in x16 mode and 64 KBytes in x8 mode used ...

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M29W640DT, M29W640DB APPENDIX D. BLOCK PROTECTION Block protection can be used to prevent any oper- ation from modifying the data stored in the memo- ry. The blocks are protected in groups, refer to Appendix A, Table 19 and Table 20 ...

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Figure 16. Programmer Equipment Group Protect Flowchart Note: Block Protection Groups are shown in Appendix D, Table 19 and Table 20. START ADDRESS = GROUP ADDRESS ...

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M29W640DT, M29W640DB Figure 17. Programmer Equipment Chip Unprotect Flowchart NO = 1000 Note: Block Protection Groups are shown in Appendix D, Table 19 and Table 20. 46/50 START PROTECT ALL GROUPS ...

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Figure 18. In-System Equipment Group Protect Flowchart Note: 1. Block Protection Groups are shown in Appendix D, Table 19 and Table 20 can be either START ...

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M29W640DT, M29W640DB Figure 19. In-System Equipment Chip Unprotect Flowchart NO = 1000 ISSUE READ/RESET COMMAND Note: Block Protection Groups are shown in Appendix D, Table 19 and Table 20. 48/50 START PROTECT ALL GROUPS n = ...

Page 49

REVISION HISTORY Table 29. Document Revision History Date Version 14-Dec-2001 -01 Document released Description of Ready/Busy signal clarified (and Figure 12 modified) Clarified allowable commands during Block Erase 19-Apr-2002 -02 Clarified the mode the device returns to in the CFI ...

Page 50

... M29W640DT, M29W640DB Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied ...

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