2SD2165 NEC, 2SD2165 Datasheet
2SD2165
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2SD2165 Summary of contents
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... NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially for high h . This transistor is ideal for simplifying drive circuits and FE reducing power dissipation because its h Darlington transistors, but single transistor. In addition, this transistor features a small resin-molded insulation package, thus contributing to high-density mounting and mounting cost reduction ...
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... Note = 5 1 Note = 5 3 Note = 3 Note = 1.0 MHz E K 1,600 to 3,200 Data Sheet D13178EJ3V0DS 2SD2165 TYP. MAX. Unit µ µ 800 1,300 3,200 500 1,000 0.3 1.0 V 1.2 V 110 MHz 50 pF ...
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... TYPICAL CHARACTERISTICS (T A Case Temperature 25°C) (°C) Case Temperature T Single pulse Collector to Emitter Voltage V (V) CE With infinite heatsink Pulse Width PW (s) Data Sheet D13178EJ3V0DS 2SD2165 (°C) C Without heatsink 3 ...
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... Collector to Emitter Voltage V Collector Current I C Collector to Base Voltage V 4 Collector Current I (V) CE (A) (V) CB Data Sheet D13178EJ3V0DS 2SD2165 Pulse test (A) C Collector Current I (A) C ...
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... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SD2165 Not all M8E 02. 11-1 ...