BFP640FESD Infineon Technologies, BFP640FESD Datasheet - Page 12

• Manufacturer Part Number: BFP640FESD
• Manufacturer: Infineon Technologies

Specifications of BFP640FESD

• Packages: TSFP-4-1
• Vceo (max): 4.1 V
• Ic(max): 50.0 mA
• Nfmin (typ): 0.65 dB
• Gmax (typ): 27.0 dB
• Oip3: 26.0 dBm

5
5.1
Table 5
Parameter
Collector emitter breakdown voltage
Collector emitter leakage current
Collector base leakage current
Emitter base leakage current
DC current gain
5.2
Table 6
Parameter
Transition frequency
Collector base capacitance
Collector emitter capacitance
Emitter base capacitance
Data Sheet
Electrical Characteristics
DC Characteristics
DC Characteristics at
General AC Characteristics
General AC Characteristics at
T
A
= 25 °C
Symbol
V
I
I
I
h
Symbol
f
C
C
C
T
CES
CBO
EBO
FE
(BR)CEO
CB
CE
EB
T
A
= 25 °C
Min.
4.1
–
–
–
110
Min.
–
–
–
–
12
Typ.
4.7
–
–
–
180
Typ.
46
0.08
0.35
0.6
Values
Values
Max.
–
500
500
10
270
Max.
–
–
–
–
Unit
V
nA
nA
μA
Unit
GHz
pF
pF
pF
Electrical Characteristics
Note / Test Condition
I
Open base
V
Emitter/base shortened
V
Open emitter
V
Open collector
V
Pulse measured
Note / Test Condition
V
f
V
f
Emitter grounded
V
f
Base grounded
V
f
Collector grounded
Revision 1.1, 2010-06-29
C
= 1 GHz
= 1 MHz
= 1 MHz
= 1 MHz
CE
CB
EB
CE
CE
CB
CE
EB
= 1 mA,
= 0.5 V,
= 0.4 V,
= 2 V,
= 2 V,
= 3 V,
= 3 V,
= 3 V,
= 3 V,
BFP640FESD
V
I
I
I
V
V
I
E
C
C
B
BE
BE
BE
I
V
= 0
= 30 mA
= 30 mA,
= 0
C
CB
= 0
= 0 V
= 0 V
= 0
= 0 V