BGS12A Infineon Technologies, BGS12A Datasheet - Page 4

• Manufacturer Part Number: BGS12A
• Manufacturer: Infineon Technologies

Specifications of BGS12A

• Packages: FWLP-6-1
• Switching Time(max): 4.0 µs
• Isolation @1ghz: 34.0 dB
• Insertion Loss @1ghz: 0.3 dB
• Pmax: 21.0 dBm

BGS12A
Features
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Description
The BGS12A General Purpose RF MOS switch is designed to cover a broad range of applications from 0.1 to
3 GHz. The symmetric design of its single pole double throw configuration, as shown in
flexibility. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL
compatible control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level
of 21 dBm, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of 0.3 dB
in the 1 GHz and 0.6 dB in the 2 GHz range.
Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied
externally.
The BGS12A RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of
GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness.
Figure 1
Type
BGS12A
Preliminary Data Sheet
Low insertion loss
High port-to-port-isolation
Low harmonic generation
On-chip control logic
Lead free solder bumps
High ESD robustness
No external components required
General purpose switch for applications up to 3 GHz
Pb-free (RoHS compliant) package
Functional Diagram
Package
FWLP-6-1
Marking
12
4
Chip
N0735
Figure 1
SPDT RF Switch
offers high design
V1.1, 2007-09-14
BGS12A
BGS12A