BGA622 Infineon Technologies, BGA622 Datasheet - Page 4

• Manufacturer Part Number: BGA622
• Manufacturer: Infineon Technologies

Specifications of BGA622

• Packages: SOT343
• Gain (typ): 12.0 dB
• F (typ): 1.2 dB
• P-1db (in): -12
• I (typ): 5.8 mA
• P-1db (out): 0.5 dBm

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Feature
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Applications
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Figure 1
Description
The BGA622 is a wide band low noise amplifier, based on Infineon Technologies’ Silicon Germanium Technology
B7HF. In order to provide the LNA in a small package the out-pin is simultaneously used for RF out and On/Off
switch. This functionality can be accessed using a RF-Choke at the Out pin, where a DC level of 0 V or an open
switches the device on and a DC level of
an insertion loss of 24 dB together with a high
Type
BGA622
Note: ESD: Electrostatic discharge sensitive device, observe handling precaution
Data Sheet
High gain
|
|
|
Low noise figure,
Operating frequency range 0.5 - 6 GHz
Typical supply voltage: 2.75 V
On/Off-Switch
Output-match on chip, input pre-matched
Low part count
70 GHz
2 kV HBM ESD protection (Pin-to-Pin)
Pb-free (RoHS compliant) package
LNA for GSM, GPS, DCS, PCS, UMTS, Bluethooth, ISM and WLAN
S
S
S
21
21
21
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2
2
2
= 15.0 dB at 1.575 GHz
= 14.2 dB at 1.9 GHz
= 13.6 dB at 2.14 GHz
f
T
Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD
Protection
Pin connection
- Silicon Germanium technology
NF
= 1.0 dB at 1.575 GHz
Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection
Package
SOT343
V
CC
switches the device off. While the device is switched off, it provides
IIP
3
up to 20 dBm.
4
SOT343
Marking
BXs
4
3
Rev. 2.2, 2008-04-14
1
2
BGA622