BAY6642 (ES) Infineon Technologies, BAY6642 (ES) Datasheet

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BAY6642 (ES)

Manufacturer Part Number
BAY6642 (ES)
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BAY6642 (ES)

Package
HSL2
Comment
Also available in (H) and (S) quality
If (max)
500.0 mA
Vbr (min)
100.0 V
Rf (typ)
-
HiRel Silicon Switching Diode
Target datasheet
Maximum Ratings
at T
Thermal Resistance
1) For T
Type
BAY6642
Parameter
Working peak reverse voltage
Average output rectified current
Forward surge current, t ≤ 10ms
Junction temperature
Operating temperature range
Storage temperature range
Junction to soldering point
For high-speed switching applications
Covers 1N6639 – 1N6643
A
=25°C; unless otherwise specified
S
≤ 110°C. For T
S
> 110 °C derating is required
Marking
-
1)
1 Anode
.
Pin Configuration
Symbol
V
I
I
T
T
T
R
O
FSM
RWM
j
op
stg
th JS
1 of 3
2 Cathode
Values
75
300
2.5
175
-65...+175
-65...+175
Typ. 100
Package
HSL2-1808
BAY6642
V2 August 2011
Unit
V
mA
A
C
C
C
K/W

Related parts for BAY6642 (ES)

BAY6642 (ES) Summary of contents

Page 1

HiRel Silicon Switching Diode Target datasheet  For high-speed switching applications  Covers 1N6639 – 1N6643 Type Marking BAY6642 Maximum Ratings at T =25°C; unless otherwise specified A Parameter Working peak reverse voltage Average output rectified current Forward surge current, ...

Page 2

Electrical Characteristics at T =25°C; unless otherwise specified A Parameter DC Characteristics Breakdown voltage -10 µA R Reverse current 150° D.C. Forward voltage I = ...

Page 3

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. ...

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