SIGC20T120L Infineon Technologies, SIGC20T120L Datasheet - Page 2

• Manufacturer Part Number: SIGC20T120L
• Manufacturer: Infineon Technologies

Specifications of SIGC20T120L

• Technology: Low Loss IGBT 3
• Vds (max): 1,200.0 V
• Ic (max): 15.0 A
• Vce(sat) (max): 2.05 V
• Vge(th) (min): 5.0 V

MAXIMUM RATINGS:
Parameter
Collector-emitter voltage, T j =25 C
DC collector current, limited by T
Pulsed collector current, t
Gate emitter voltage
Operating junction and storage temperature
1 )
STATIC CHARACTERISTICS (tested on chip), T j =25 C, unless otherwise specified:
Parameter
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Integrated gate resistor
ELECTRICAL CHARACTERISTICS (tested at component):
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING CHARACTERISTICS (tested at component), Inductive Load
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
1)
Edited by INFINEON Technologies AI PS DD HV3, L7631B, Edition 2, 04.09.03
values also influenced by parasitic L- and C- in measurement and package.
depending on thermal properties of assembly
p
limited by T
jmax
jmax
V
V
V
I
I
R
C
C
C
t
t
t
t
Symbol
CES
GES
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
(BR)CES
CE(sat)
GE(th)
Gint
i s s
o s s
r s s
V
V
f =1MHz
T
V
I
V
R
V
C
I
V
C
j
C E
G E
C C
G E
G
V
CE
= 1 2 5 C
= 1 5 A ,
V
GE
=600µA , V
= 6 2
CE
GE
=1200V , V
= 2 5 V ,
= 0 V ,
= - 1 5 / 1 5 V ,
Conditions
=600V,
=0V , I
Conditions
Conditions
=0V , V
=15V, I
V
I
I
V
T
C
c p u l s
j
CE
G E
, T
Symbol
C
s t g
= 0.5mA
GE
C
GE
=15A
=20V
GE
=V
1)
=0V
SIGC20T120L
CE
min.
min.
1200
min.
1.35
5.0
-55 ... +150
Value
1200
45
1 )
20
Value
Value
typ.
Value
typ.
1090
1.65
0.09
0.03
0.52
0.12
typ.
5.8
58
48
--
max.
max.
max.
2.05
120
6.5
2
Unit
°C
Unit
pF
Unit
µs
V
A
A
V
Unit
µA
nA
V