SIGC156T120R2CQ Infineon Technologies, SIGC156T120R2CQ Datasheet
SIGC156T120R2CQ
Specifications of SIGC156T120R2CQ
Related parts for SIGC156T120R2CQ
SIGC156T120R2CQ Summary of contents
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... Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment Edited by INFINEON Technologies HV3, L7181Q, 02.06.2005, Edition 1.0 SIGC156T120R2CQ This chip is used for: IGBT Modules Applications: SMPS, resonant applications I Die Size ...
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... SWITCHING CHARACTERISTICS (tested at component), Inductive Load Parameter Turn-on delay time Rise time Turn-off delay time Fall time 1) values also influenced by parasitic L- and C- in measurement and package. Edited by INFINEON Technologies HV3, L7181Q, 02.06.2005, Edition 1.0 SIGC156T120R2CQ Symbol jmax C I jmax ...
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... CHIP DRAWING: Edited by INFINEON Technologies HV3, L7181Q, 02.06.2005, Edition 1.0 SIGC156T120R2CQ ...
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... Life support devices or systems are intended to be implanted in the human body support and / or maintain and sustain and / or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies HV3, L7181Q, 02.06.2005, Edition 1.0 SIGC156T120R2CQ ...