BSD314SPE H6327 Infineon Technologies, BSD314SPE H6327 Datasheet
BSD314SPE H6327
Specifications of BSD314SPE H6327
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BSD314SPE H6327 Summary of contents
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OptiMOS™-P 3 Small-Signal-Transistor Features • P-channel • Enhancement mode • Logic level (4.5V rated) • ESD protected • Qualified according AEC Q101 • 100% Lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package BSD314SPE PG-SOT-363 L6327: 3000 pcs/ reel ...
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Parameter Thermal characteristics Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance 1) 2 Performed on 40mm FR4 PCB. The traces are ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...
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Power dissipation P =f(T ) tot A 0.5 0.375 0.25 0.125 Safe operating area I =f =25 ° parameter ...
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Typ. output characteristics I =f =25 ° parameter 4 Typ. transfer characteristics I ...
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Drain-source on-state resistance R =f =-1 DS(on 250 200 98 % 150 100 50 0 -60 - Typ. capacitances C =f MHz; T ...
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Avalanche characteristics =25 Ω parameter: T j(start Drain-source breakdown voltage V =f =-250 µA BR(DSS ...
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Package Outline: Footprint: Reflow soldering: Rev 2.2 SOT-363 Packing: page 8 BSD314SPE 2011-07-14 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...