BSL302SN Infineon Technologies, BSL302SN Datasheet - Page 6

• Manufacturer Part Number: BSL302SN
• Manufacturer: Infineon Technologies

Specifications of BSL302SN

• Package: TSOP-6
• Vds (max): 30.0 V
• Rds (on) (max) (@10v): 25.0 mOhm
• Rds (on) (max) (@4.5v): 38.0 mOhm
• Rds (on) (max) (@2.5v): -

1.07
9 Drain-source on-state resistance
R
C =f(V
DS(on)
10
10
10
10
50
40
30
20
10
DS
=f(T
0
4
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz; T
=7.1 A; V
-20
5
20
98 %
GS
V
T
=10 V
DS
j
10
[°C]
[V]
60
j
Coss
Ciss
=25°C
Crss
typ
100
15
140
page 6
20
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
10
2.8
2.4
1.6
1.2
0.8
0.4
10
10
10
=f(T
SD
2
0
-1
-2
-3
2
1
0
-60
)
0
j
); V
D
j
150 °C
DS
-20
=V
0.4
GS
; I
20
D
25 °C
=30 µA
V
T
SD
j
0.8
[°C]
2 %
98 %
typ
60
[V]
25 °C, 98%
150 °C, 98%
100
1.2
BSL302SN
140
2011-06-03
1.6