BSD316SN Infineon Technologies, BSD316SN Datasheet - Page 7

• Manufacturer Part Number: BSD316SN
• Manufacturer: Infineon Technologies

Specifications of BSD316SN

• Package: SOT-363
• Vds (max): 30.0 V
• Rds (on) (max) (@10v): 160.0 mOhm
• Rds (on) (max) (@4.5v): 280.0 mOhm
• Rds (on) (max) (@2.5v): -

Rev 2.3
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
10
10
10
10
36
35
34
33
32
31
30
29
28
27
26
AV
-1
-2
1
0
-60
=f(T
10
); R
0
j
GS
); I
j(start)
=25 Ω
-20
D
=250 µA
10
20
1
t
T
AV
j
[°C]
[µs]
60
10
2
100
125 °C
100 °C
25 °C
140
10
page 7
3
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
8
7
6
5
4
3
2
1
0
V
g(th)
g s(th)
0
GS
gate
); I
DD
Q
D
=1.4 A pulsed
g s
0.25
Q
6 V
Q
gate
g
0.5
Q
[nC]
15 V
sw
Q
24 V
g d
0.75
BSD316SN
Q
g ate
2011-07-14
1