BSS214NW Infineon Technologies, BSS214NW Datasheet
BSS214NW
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BSS214NW Summary of contents
Page 1
... =1 = /dt di /dt =200 A/µs, =150 °C T j,max V GS =25 ° tot stg JESD22-A114 -HBM page 1 BSS214NW 20 DS =4.5 V 140 V DS(on),max GS =2.5 V 250 V GS 1.5 PG-SOT323 Marking Lead Free Packing X5s Yes Non dry Value 1.5 1.2 6 3.7 6 ± ...
Page 2
... =150 ° = GSS DS( |>2 DS(on)max page 2 BSS214NW Values Unit min. typ. max 250 K 0.7 0.95 1.2 μ 100 - - 100 nA - 171 250 mΩ - 106 140 , - 2011-07-13 ...
Page 3
... plateau I S =25 ° S,pulse = =1 =25 ° = =1 /dt =100 A/µ page 3 BSS214NW Values Unit min. typ. max. - 107 143 2.2 - ...
Page 4
... A 4 Max. transient thermal impedance =f(t Z thJA p parameter µs 10 µ 100 µ [V] DS page 4 BSS214NW ≥4 100 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - ...
Page 5
... Typ. forward transconductance =f °C 150 ° [V] GS page 5 BSS214NW ); T =25 ° 2.2 V 2.5 V 3 [A] D =25 ° [ ...
Page 6
... Forward characteristics of reverse diode =25°C =f parameter Ciss Coss -1 10 Crss - [V] DS page 6 BSS214NW ); =3.7 µ typ 100 140 T [° °C 150 °C 150 °C, 98% 25 °C, 98% 0.4 0.8 1.2 ...
Page 7
... V GS gate parameter °C 3 100 °C 2 125 ° [µs] 16 Gate charge waveforms s(th) Q g(th) 60 100 140 [°C] j page 7 BSS214NW ); I =1.5 A pulsed 0.5 Q [nC] gate ate 2011-07-13 ...
Page 8
... Package Outline: Footprint: Dimensions in mm Rev 2.2 SOT323 Packaging: page 8 BSS214NW 2011-07-13 ...
Page 9
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 2.2 page 9 BSS214NW 2011-07-13 ...